Kretschmann configuration as a method to enhance optical absorption in two-dimensional graphene-like semiconductors

Objectives. The optical properties of two-dimensional semiconductor materials, specifically monolayered transition metal dichalcogenides, present new horizons in the field of nano- and optoelectronics. However, their practical application is hindered by the issue of low light absorption. When working with such thin structures, it is essential to consider numerous complex factors, such as resonance and plasmonic effects which can influence absorption efficiency. The aim of this study is the optimization of light absorption in a two-dimensional semiconductor in the Kretschmann configuration for future use in optoelectronic devices, considering the aforementioned phenomena. Methods. A numerical modeling method was applied using the finite element method for solving Maxwell’s equations. A parametric analysis was conducted focusing on three parameters: angle of light incidence, metallic layer thickness, and semiconductor layer thickness.
Results. Parameters were identified at which the maximum area of absorption peak was observed, including the metallic layer thickness and angle of light incidence. Based on the resulting graphs, optimal parameters were determined, in order to achieve the highest absorption percentages in the two-dimensional semiconductor film.
Conclusions. Based on numerical studies, it can be asserted that the optimal parameters for maximum absorption in the monolayer film are: Ag thickness <20 nm and angle of light incidence between 55° and 85°. The maximum absorption in the two-dimensional film was found only to account for a portion of the total absorption of the entire structure. Thus, a customized approach to parameter selection is necessary, in order to achieve maximum efficiency in certain optoelectronic applications.

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