GaAs PHEMT PERFORMANCE INCREASE USING DELTA-DOPING IN THE FORM OF NANOWIRES OF TIN ATOMS

A. E. Yachmenev; V. I. Ryzhii; P. P. Maltsev

Russian Technological Journal
Rossiiskii Tekhnologicheskii Zhurnal

ISSN 2782-3210 (Print)
ISSN 2500-316X (Online)

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Yachmenev A.E., Ryzhii V.I., Maltsev P.P. GaAs PHEMT PERFORMANCE INCREASE USING DELTA-DOPING IN THE FORM OF NANOWIRES OF TIN ATOMS. Russian Technological Journal. 2017;5(2):40-46. (In Russ.) https://doi.org/10.32362/2500-316X-2017-5-2-40-46

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ISSN 2782-3210 (Print)
ISSN 2500-316X (Online)

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About the Authors

A. E. Yachmenev
Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences
Russian Federation

V. I. Ryzhii
Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences
Russian Federation

P. P. Maltsev
Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow Technological University,
Russian Federation

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