MONOLITHIC INTEGRATED CIRCUIT OF GаN LOW-NOISE AMPLIFIER FOR 57-64 GHz BANDWIDTH
https://doi.org/10.32362/2500-316X-2016-4-4-42-53
Abstract
The article describes the development of a low-noise amplifier for the 57-64 GHz band based on a wide-gap semiconductor - gallium nitride. We analyze existing commercial developments in the area of low-noise amplifiers for the 60 GHz band, which are based mainly on gallium arsenide. At the initial stage we developed test HEMT-transistors on the basis of which we created the transistor models - Fujii model and Pospieszalski model. On the basis of the developed models we designed an amplifier schematic circuit consisting of 4 cascades. Based on the schematic circuit, we designed a topology of a monolithic integrated circuit in the ADS CAD, and made a complete electrodynamic calculation of the topology, which showed reachability of the required characteristics in the frequency range 57-64 GHz. Conducted measurements of a manufactured sample showed the fulfillment requirements of the range and a good agreement with the calculations. One of the features of the technology of the developed amplifier is the step of forming of electrical connections - through holes, which provide a common grounding plane of the circuit.
About the Authors
D. V. Krapukhin
Moscow Technological University (MIREA), Institute of Ultra High Frequency Semiconductor Electronics (IUHFSE RAS)
Russian Federation
Russian Federation
P. P. Maltsev
Moscow Technological University (MIREA), Institute of Ultra High Frequency Semiconductor Electronics (IUHFSE RAS)
Russian Federation
Russian Federation
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Review
For citations:
Krapukhin D.V., Maltsev P.P. MONOLITHIC INTEGRATED CIRCUIT OF GаN LOW-NOISE AMPLIFIER FOR 57-64 GHz BANDWIDTH. Russian Technological Journal. 2016;4(4):42-53. (In Russ.) https://doi.org/10.32362/2500-316X-2016-4-4-42-53
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