Thermal and mechanical degradation mechanisms in heterostructural field-effect transistors based on gallium nitride

Vadim M. Minnebaev

Russian Technological Journal
Rossiiskii Tekhnologicheskii Zhurnal

ISSN 2782-3210 (Print)
ISSN 2500-316X (Online)

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Minnebaev V.M. Thermal and mechanical degradation mechanisms in heterostructural field-effect transistors based on gallium nitride. Russian Technological Journal. 2025;13(2):57-73. https://doi.org/10.32362/2500-316X-2025-13-2-57-73. EDN: TTUFNR

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ISSN 2782-3210 (Print)
ISSN 2500-316X (Online)

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About the Author

Vadim M. Minnebaev
Microwave Systems
Russian Federation

Vadim M. Minnebaev, Cand. Sci. (Eng.), Assistant Professor, Deputy General Director on the Development of Electronic Components

5-1, Shchelkovskoye sh., Moscow, 105122

Scopus AuthorID 6602931676

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