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Bakerenkova D.M., Petrov A.S. Interface traps build-up and its influence on electrostatic discharge robustness of high-power metal-oxide-semiconductor field-effect transistor. Russian Technological Journal. 2025;13(6):86-94. https://doi.org/10.32362/2500-316X-2025-13-6-86-94. EDN: KOATTE

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ISSN 2782-3210 (Print)
ISSN 2500-316X (Online)