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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mireabulletin</journal-id><journal-title-group><journal-title xml:lang="ru">Russian Technological Journal</journal-title><trans-title-group xml:lang="en"><trans-title>Russian Technological Journal</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2782-3210</issn><issn pub-type="epub">2500-316X</issn><publisher><publisher-name>RTU MIREA</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32362/2500-316X-2023-11-3-38-45</article-id><article-id custom-type="elpub" pub-id-type="custom">mireabulletin-701</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МИКРО- И НАНОЭЛЕКТРОНИКА. ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MICRO- AND NANOELECTRONICS. CONDENSED MATTER PHYSICS</subject></subj-group></article-categories><title-group><article-title>Дисперсия оптических характеристик кристалла Si:PbGeO в терагерцовом диапазоне</article-title><trans-title-group xml:lang="en"><trans-title>Dispersion of optical constants of Si:PbGeO crystal in the terahertz range</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-3013-8655</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Билык</surname><given-names>В. Р.</given-names></name><name name-style="western" xml:lang="en"><surname>Bilyk</surname><given-names>V. R.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Билык Владислав Романович - кандидат физико-математических наук, младший научный сотрудник, кафедра наноэлектроники Института перспективных технологий и индустриального программирования.</p><p>119454, Москва, пр-т Вернадского, д. 78</p><p>ResearcherID AAH-4586-2019, Scopus Author ID 57194048515</p></bio><bio xml:lang="en"><p>Vladislav R. Bilyk - Cand. Sci. (Phys.-Math.), Junior Researcher, Department of Nanoelectronics, Institute for Advanced Technologies and Industrial Programming, MIREA - Russian Technological University.</p><p>78, Vernadskogo pr., Moscow, 119454</p><p>ResearcherID AAH-4586-2019, Scopus Author ID 57194048515</p></bio><email xlink:type="simple">vrbilyk@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-9091-2609</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Брехов</surname><given-names>К. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Brekhov</surname><given-names>K. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Брехов Кирилл Алексеевич - кандидат физико-математических наук, инженер-исследователь, кафедра наноэлектроники Института перспективных технологий и индустриального программирования.</p><p>119454, Москва, пр-т Вернадского, д. 78</p><p>ResearcherID Q-1014-2017, Scopus Author ID 55452447100</p></bio><bio xml:lang="en"><p>Kirill A. Brekhov - Cand. Sci. (Phys.-Math.), Research Engineer, Department of Nanoelectronics, Institute for Advanced Technologies and Industrial Programming, MIREA - Russian Technological University.</p><p>78, Vernadskogo pr., Moscow, 119454</p><p>ResearcherID Q-1014-2017, Scopus Author ID 55452447100</p></bio><email xlink:type="simple">brekhov_ka@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-7819-822X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Агранат</surname><given-names>М. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Agranat</surname><given-names>M. B.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Агранат Михаил Борисович - доктор физико-математических наук, главный научный сотрудник.</p><p>125412, Москва, ул. Ижорская, д. 13, стр. 2</p><p>Scopus Author ID 6602697816</p></bio><bio xml:lang="en"><p>Mikhail B. Agranat - Dr. Sci. (Phys.-Math.), Chief Researcher, Joint Institute for High Temperatures, Russian Academy of Sciences.</p><p>13/2, Izhorskaya ul., Moscow, 125412</p><p>Scopus Author ID 6602697816</p></bio><email xlink:type="simple">agranat2004@mail.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-0387-5016</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мишина</surname><given-names>Е. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Mishina</surname><given-names>E. D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Мишина Елена Дмитриевна – доктор физико-математических наук, профессор, заведующий лабораторией, кафедра наноэлектроники Института перспективных технологий и индустриального программирования.</p><p>119454, Москва, пр-т Вернадского, д. 78</p><p>ResearcherID D-6402-2014, Scopus Author ID 7005350309</p></bio><bio xml:lang="en"><p>Elena D. Mishina - Dr. Sci. (Phys.-Math.), Professor, Head of the Laboratory, Department of Nanoelectronics, Institute for Advanced Technologies and Industrial Programming, MIREA - Russian Technological University.</p><p>78, Vernadskogo pr., Moscow, 119454</p><p>ResearcherID D-6402-2014, Scopus Author ID 7005350309</p></bio><email xlink:type="simple">mishina_elena57@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>ФГБОУ ВО «МИРЭА - Российский технологический университет»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>MIREA - Russian Technological University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>ФГБУН Объединенный институт высоких температур Российской академии наук</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Joint Institute for High Temperatures, Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>03</day><month>06</month><year>2023</year></pub-date><volume>11</volume><issue>3</issue><fpage>38</fpage><lpage>45</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Билык В.Р., Брехов К.А., Агранат М.Б., Мишина Е.Д., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Билык В.Р., Брехов К.А., Агранат М.Б., Мишина Е.Д.</copyright-holder><copyright-holder xml:lang="en">Bilyk V.R., Brekhov K.A., Agranat M.B., Mishina E.D.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.rtj-mirea.ru/jour/article/view/701">https://www.rtj-mirea.ru/jour/article/view/701</self-uri><abstract><sec><title>Цели</title><p>Цели. Успехи лазерной физики последнего десятилетия привели к созданию источников однопериодных электромагнитных импульсов длительностью порядка 1 пс, что соответствует терагерцовому (ТГц) диапазону частот, с амплитудой поля в несколько десятков МВ/см. Это позволило приложить электрическое поле к сегнетоэлектрику без электродов и наблюдать не только возбуждение когерентных фононов, но и сверхбыстрое, в субпикосекундном масштабе времени, динамическое переключение поляризации. Для обнаружения переключения поляризации используется метод накачки-зондирования, где в качестве накачки используется ТГц-импульс, а зонд является оптическим. Мерой переключения поляризации под действием ТГц-импульса служит сигнал второй оптической гармоники, поскольку ее интенсивность пропорциональна квадрату поляризации. Для оценки эффективности переключения требуются как линейные (показатель преломления и коэффициент поглощения), так и нелинейные оптические характеристики (квадратичная и кубичная восприимчивости). Знание линейных оптических характеристик необходимо также для любых применений рассматриваемых кристаллов в ТГц-диапазоне.</p></sec><sec><title>Методы</title><p>Методы. Использована методика ТГц-спектроскопии во временной области, в которой на вещество направляется пикосекундный ТГц-импульс, а регистрируется ТГц-импульс, прошедший через вещество, путем стробирования детектора фемтосекундным оптическим импульсом. Исследование ТГц-индуцированной динамики параметра порядка в сегнетоэлектрике проводилось путем детектирования интенсивности нелинейно-оптического сигнала на частоте второй оптической гармоники.</p></sec><sec><title>Результаты</title><p>Результаты. На кристалле германата свинца, легированного кремнием, измерены пропускание ТГц-волны и интенсивность генерации второй гармоники во временной и спектральной областях, на основании чего рассчитаны дисперсия коэффициента поглощения и кубичной нелинейной восприимчивости в диапазоне 0.5-2.0 ТГц. Обнаружено наличие области фундаментального поглощения вблизи фононных мод, а также резонансное усиление кубичной нелинейной восприимчивости для двух фононных мод Ω1 = 1.3 ТГц и Ω2 = 2.0 ТГц.</p></sec><sec><title>Выводы</title><p>Выводы. Предложенная методика эффективна для анализа дисперсии оптических характеристик сегнето-электрических кристаллов. Существенно улучшено спектральное разрешение, составляющее в данной работе 0.1 ТГц, а также точность определения нелинейной восприимчивости за счет детального анализа линейного и нелинейного вкладов в интенсивность второй гармоники.</p></sec></abstract><trans-abstract xml:lang="en"><sec><title>Objectives</title><p>Objectives. Advances in laser physics over the last decade have led to the creation of sources of single-period electromagnetic pulses having a duration of about 1 ps, corresponding to the terahertz (THz) frequency range and a field amplitude of several tens of MV/cm. This allows the electrode-free application of an electric field to a ferroelectric for observing not only the excitation of coherent phonons, but also ultrafast (at the sub-picosecond timescale) dynamic polarization switching. To detect polarization switching, a pump-probe technique is used in which a THz pulse is used with an optical probe. Since its intensity is proportional to the square of the polarization, the signal of the optical second harmonic is used to measure polarization switching under the action of a THz pulse. To evaluate switching efficiency, both linear (refractive index and absorption coefficient) and non-linear optical characteristics (quadratic and cubic susceptibilities) are required. For any application of ferroelectric crystals in the THz range, knowledge of the relevant linear optical characteristics is also necessary.</p></sec><sec><title>Methods</title><p>Methods. The technique of THz spectroscopy in the time domain was used; here, a picosecond THz pulse transmitted through the crystal is recorded by strobing the detector with a femtosecond optical pulse. The THz-induced dynamics of the order parameter in a ferroelectric was studied by detecting the intensity of a nonlinear optical signal at the frequency of the second optical harmonic.</p></sec><sec><title>Results</title><p>Results. The transmission of a THz wave and the intensity of second harmonic generation on a lead germanate crystal doped with silicon in the time and spectral domains were measured. On this basis, the absorption coefficient dispersion and cubic nonlinear susceptibility were calculated in the range of 0.5-2.0 THz. The presence of a region of fundamental absorption near the phonon modes was confirmed along with a resonant enhancement of the cubic nonlinear susceptibility for two phonon modes Ω1 = 1.3 THz and Ω2 = 2.0 THz.</p></sec><sec><title>Conclusions</title><p>Conclusions. The proposed technique is effective for analyzing the dispersion of the optical characteristics of ferroelectric crystals. The significantly improved spectral resolution (0.1 THz) increases the accuracy of determining nonlinear susceptibility due to the detailed analysis of the linear and nonlinear contributions to the second harmonic intensity.</p></sec></trans-abstract><kwd-group xml:lang="ru"><kwd>терагерцовое излучение</kwd><kwd>сегнетоэлектрики</kwd><kwd>спектроскопия</kwd><kwd>генерация второй оптической гармоники</kwd></kwd-group><kwd-group xml:lang="en"><kwd>terahertz radiation</kwd><kwd>ferroelectrics</kwd><kwd>spectroscopy</kwd><kwd>optical second harmonic generation</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена при поддержке Российского научного фонда (грант № 22-12-00334), а также Российского фонда фундаментальных исследований (грант № 20-21-00043). Авторы благодарят А.А. Буша за предоставление кристалла PGO.</funding-statement><funding-statement xml:lang="en">This work was supported by the Russian Science Foundation (grant No. 22-12-00334) and the Russian Foundation for Basic Research (grant No. 20-21-00043). The authors also thank A.A. Bush for the PGO crystal.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Iwasaki H., Sugii K., Yamada T., Niizeki N. 5PbO·3GeO2 Crystal; a new ferroelectric. Appl. Phys. Lett. 1971;18(10):444-445. http://aip.scitation.org/doi/10.1063/1.1653487</mixed-citation><mixed-citation xml:lang="en">Iwasaki H., Sugii K., Yamada T., Niizeki N. 5PbO·3GeO2 Crystal; a new ferroelectric. Appl. Phys. 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