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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mireabulletin</journal-id><journal-title-group><journal-title xml:lang="ru">Russian Technological Journal</journal-title><trans-title-group xml:lang="en"><trans-title>Russian Technological Journal</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2782-3210</issn><issn pub-type="epub">2500-316X</issn><publisher><publisher-name>RTU MIREA</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32362/2500-316X-2022-10-5-73-91</article-id><article-id custom-type="elpub" pub-id-type="custom">mireabulletin-570</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МИКРО- И НАНОЭЛЕКТРОНИКА. ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MICRO- AND NANOELECTRONICS. CONDENSED MATTER PHYSICS</subject></subj-group></article-categories><title-group><article-title>Технология формирования сегнетоэлектрических регулярных доменных структур с использованием интерферирующих упругих волн</article-title><trans-title-group xml:lang="en"><trans-title>Technology for the creation of ferroelectric regular domain structures using interfering elastic waves</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-1909-1435</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Крутов</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Krutov</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Крутов Владислав Викторович – кандидат технических наук, доцент, кафедра наноэлектроники Института перспективных технологий и индустриального программирования.</p><p>119454, Москва, пр-т Вернадского, д. 78.</p></bio><bio xml:lang="en"><p>Vladislav V. Krutov - Cand. Sci. (Eng.), Associate Professor, Department of Nanoelectronics, Institute for Advanced Technologies and Industrial Programming, MIREA - Russian Technological University.</p><p>78, Vernadskogo pr., Moscow, 119454.</p></bio><email xlink:type="simple">v_krutov@mirea.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Сигов</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Sigov</surname><given-names>A. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Сигов Александр Сергеевич - академик РАН, доктор физико-математических наук, профессор, президент МИРЭА - Российский технологический университет.</p><p>119454, Россия, Москва, пр-т Вернадского, д. 78.</p></bio><bio xml:lang="en"><p>Alexander S. Sigov - Academician at the Russian Academy of Sciences, Dr. Sci. (Phys.-Math.), Professor, President, MIREA - Russian Technological University.</p><p>78, Vernadskogo pr., Moscow, 119454.</p><p>ResearcherID L-4103-2017, Scopus Author ID 35557510600, RSCI SPIN-code 2869-5663</p></bio><email xlink:type="simple">sigov@mirea.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>МИРЭА - Российский технологический университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>MIREA - Russian Technological University</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2022</year></pub-date><pub-date pub-type="epub"><day>21</day><month>10</month><year>2022</year></pub-date><volume>10</volume><issue>5</issue><fpage>73</fpage><lpage>91</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Крутов В.В., Сигов А.С., 2022</copyright-statement><copyright-year>2022</copyright-year><copyright-holder xml:lang="ru">Крутов В.В., Сигов А.С.</copyright-holder><copyright-holder xml:lang="en">Krutov V.V., Sigov A.S.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.rtj-mirea.ru/jour/article/view/570">https://www.rtj-mirea.ru/jour/article/view/570</self-uri><abstract><sec><title>Цели</title><p>Цели. Работы в области доменной инженерии в сегнетоэлектриках ведутся во многих лабораториях мира. На протяжении ряда лет в РТУ МИРЭА проводятся исследования по созданию высокопроизводительной технологии формирования сегнетоэлектрических фотонных и фононных кристаллов. Технология характеризуется малой продолжительностью технологического цикла и обеспечивает необходимую глубину пространственно-периодического инвертирования доменов. Ключевым звеном технологии является комбинированное воздействие однородного электрического поля и интерферирующих упругих волн высоких частот, создающих температурную решетку. Технология имеет универсальный характер в отношении сегнетоэлектриков различной степени акустической прозрачности, что достигается путем использования сильно диссипативных жидких электродов определенной толщины. При этом энергия упругих волн практически не проникает в сегнетоэлектрик, что исключает проявление нежелательных эффектов. Цель настоящей статьи -анализ результатов работ, выполненных в РТУ МИРЭА, в области технологии формирования сегнетоэлектрических регулярных доменных структур (РДС) в период с 2008 г. по настоящее время.</p></sec><sec><title>Методы</title><p>Методы. Использованы положения теории распространения, преломления и интерференции упругих волн в конденсированных средах, в частности ньютоновская модель жидкости применительно к сдвиговым волнам, а также компьютерное моделирование. При рассмотрении основных этапов биимпульсной гетеро-термальной технологии формирования РДС применялись методы анализа и синтеза.</p></sec><sec><title>Результаты</title><p>Результаты. Показана возможность формирования не только микро-, но также субмикронных РДС. Даны рекомендации по выбору типа и конкретных свойств жидких электродов, углов между направлением распространения интерферирующих волн, а также их частоты. Показано, что использование в качестве жидких электродов сильно диссипативных ионных жидкостей создает благоприятные условия для формирования РДС с малым периодом при комнатной температуре. Так, на сдвиговых волнах с электродами на основе LiPF6-PC на частоте 300 МГц могут быть созданы РДС с периодом около 2 мкм. Определены основные технологические параметры, как для случая воздействия продольных упругих волн, так и для случая сдвиговых волн с горизонтальной поляризацией. Результаты применимы к таким сегнетоэлектрикам как ниобат лития, титанил-фосфат калия, цирконат-титанат свинца.</p></sec><sec><title>Выводы</title><p>Выводы. Предложенные и исследованные методы ориентированы на массовое производство устройств на основе РДС, в т.ч. на изготовление оптических параметрических генераторов, устройств акустоэлектроники, а также генераторов терагерцовых волн и генераторов второй оптической гармоники. Технология обладает малой продолжительностью технологического цикла, сопоставимой с временем переключения поляризации в используемом сегнетоэлектрике.</p></sec></abstract><trans-abstract xml:lang="en"><sec><title>Objectives</title><p>Objectives. In many laboratories around the world, work is underway in the field of domain engineering of ferroelectrics. For a number of years, RTU MIREA has been conducting research on the creation of a high-performance technology for the formation of ferroelectric photonic and phononic crystals. The technology is characterized by a short duration of the technological cycle and provides the necessary depth of spatially periodic domain inversion. The key element of the technology is the combined effect of a uniform electric field and interfering high-frequency elastic waves that create a temperature grating. The technology is universal in relation to ferroelectrics of varying degrees of acoustic transparency, which is achieved by using highly dissipative liquid electrodes of a certain thickness. In this case, the energy of elastic waves practically does not penetrate into the ferroelectric, so the manifestation of undesirable effects is excluded. The purpose of this review article is to analyze the results of work carried out at RTU MIREA in the field of technology for the formation of ferroelectric regular domain structures (RDSs) during the period from 2008 to the present.</p></sec><sec><title>Methods</title><p>Methods. Provisions of the theory of propagation, refraction and interference of elastic waves in condensed media are used, in particular, the Newtonian model of a liquid as applied to shear waves, as well as computer simulation. When considering the main stages of the Double Pulse heterothermal technology for the formation of RDSs, methods of analysis and synthesis were applied.</p></sec><sec><title>Results</title><p>Results. The possibility of forming not only micro-, but also submicron RDSs is shown. Recommendations are given on the choice of the type and specific properties of liquid electrodes, the angles between the direction of propagation of interfering waves, and their frequency. It is shown, in particular, that the use of highly dissipative ionic liquids as liquid electrodes creates favorable conditions for the formation of an RDS with a short period at room temperature. Thus, on shear waves with electrodes based on LiPF6-PC at a frequency of 300 MHz, RDS with a period of about 2 цт can be created. The main technological parameters are determined both for the case of the action of longitudinal elastic waves and for the case of shear waves with horizontal polarization. The results are applicable to ferroelectrics such as lithium niobate, potassium titanyl phosphate, and lead zirconate titanate.</p></sec><sec><title>Conclusions</title><p>Conclusions. The proposed and studied methods are focused on the mass production of devices based on RDSs, in particular, on the manufacturing of optical parametric oscillators, acoustoelectronic devices, as well as terahertz wave generators and second harmonic oscillators. The technology has a short duration of the technological cycle, comparable to the polarization switching time in the used ferroelectric.</p></sec></trans-abstract><kwd-group xml:lang="ru"><kwd>доменная инженерия</kwd><kwd>сегнетоэлектрики</kwd><kwd>температурные решетки</kwd><kwd>биимпульсная гетеро-термальная технология</kwd><kwd>упругие волны</kwd><kwd>акустоинтерференционный метод</kwd></kwd-group><kwd-group xml:lang="en"><kwd>domain engineering</kwd><kwd>ferroelectrics</kwd><kwd>temperature gratings</kwd><kwd>double pulse heterothermal technology</kwd><kwd>elastic waves</kwd><kwd>acoustic interference method</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Sarin Kumar A.K., Paruch P, Marre D., Pellegrino L., Tybell T., Ballandras S., Triscone J.M. A novel high frequency surface acoustic wave device based on piezoelectric interdigital transducers. Integr. 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