mireabulletinRussian Technological JournalRussian Technological Journal2782-32102500-316XRTU MIREA10.32362/2500-316X-2022-10-4-93-100mireabulletin-554Research ArticleМИРОВОЗЗРЕНЧЕСКИЕ ОСНОВЫ ТЕХНОЛОГИИ И ОБЩЕСТВАPHILOSOPHICAL FOUNDATIONS OF TECHNOLOGY AND SOCIETYНаноэлектроника и нанотехнологии: перспективные подходы в образовательном процессеNanoelectronics and nanotechnology: promising approaches in the educational processСиговА. С.SigovA. S.

Сигов Александр Сергеевич - академик РАН, доктор физико-математических наук, профессор, президент.

119454, Москва, пр-т Вернадского, д. 78.

Scopus Author ID 35557510600, ResearcherlD L-4103-2017, SPIN-код РИНЦ 2869-5663

Alexander S. Sigov - Academician of the Russian Academy of Sciences, Dr. Sci. (Phys.-Math.), Professor, President, MIREA - Russian Technological University.

78, Vernadskogo pr., Moscow, 119454.

Scopus Author ID 35557510600, ResearcherID L-4103-2017, RSCI SPIN-code 2869-5663

sigov@mirea.ruhttps://orcid.org/0000-0002-7627-4978ГладышевИ. В.GladyshevI. V.

Гладышев Игорь Васильевич – кандидат физико-математических наук, доцент, доцент кафедры наноэлектроники Института перспективных технологий и индустриального программирования.

119454, Москва, пр-т Вернадского, д. 78.

Scopus Author ID 6701612553, ResearcherlD N-1535-2016, SPIN-код РИНЦ 6735-1887

Igor V. Gladyshev - Cand. Sci. (Phys.-Math.), Associate Professor, Department of Nanoelectronics, Institute of Advanced Technologies and Industrial Programming, MIREA - Russian Technological University.

78, Vernadskogo pr., Moscow, 119454.

Scopus Author ID 6701612553, ResearcherID N-1535-2016, RSCI SPIN-code 6735-1887

i_gladyshev@mirea.ruЮрасовА. Н.YurasovA. N.

Юрасов Алексей Николаевич – доктор физико-математических наук, доцент, профессор кафедры наноэлектроники, заместитель директора Института перспективных технологий и индустриального программирования.

119454, Москва, пр-т Вернадского, д. 78.

Scopus Author ID 6602974416, ResearcherID M-3113-2016, SPIN-код РИНЦ 4259-8885

Alexey N. Yurasov - Dr. Sci. (Phys.-Math.), Professor, Department of Nanoelectronics, Deputy Director of the Institute of Advanced Technologies and Industrial Programming, MIREA - Russian Technological University.

78, Vernadskogo pr., Moscow, 119454.

Scopus Author ID 6602974416, ResearcherID M-3113-2016, RSCI SPIN-code 4259-8885

alexey_yurasov@mail.ruМИРЭА - Российский технологический университетRussian Federation20223007202210493100Copyright © Сигов А.С., Гладышев И.В., Юрасов А.Н., 20222022Сигов А.С., Гладышев И.В., Юрасов А.Н.Sigov A.S., Gladyshev I.V., Yurasov A.N.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.rtj-mirea.ru/jour/article/view/554Цели

Цели. Наноэлектроника - область современной электроники, занимающаяся разработкой физических и технологических основ создания интегральных схем с характерными топологическими размерами элементов, не превышающими 100 нм. Нанотехнологии включают создание и использование материалов, устройств и технических систем, функционирование которых определяется наноструктурой, то есть ее упорядоченными фрагментами размером от 1 до 100 нм. Цель работы - раскрыть концепцию подготовки высококвалифицированных специалистов в сфере наноэлектроники и нанотехнологий на примере кафедры наноэлектроники Института перспективных технологий и индустриального программирования РТУ МИРЭА.

Методы

Методы. Анализ перспективных подходов в образовательном процессе в рамках наноиндустрии.

Результаты

Результаты. В статье выделены три фундаментальные составляющие образования в сфере наноиндустрии: физическая (изучение и поиск новых перспективных физических эффектов); материаловедческая, связанная с изучением, поиском и синтезом новых перспективных материалов; информационная (освоение современных пакетов программ и языков программирования для моделирования широкого спектра элементов и материалов наноиндустрии).

Выводы

Выводы. Сочетание научных лабораторий и центров на кафедре наноэлектроники позволило эффективно реализовать все три фундаментальные составляющие образования в сфере наноиндустрии. После окончания кафедры наноэлектроники выпускники могут работать в ведущих институтах и научно-технических организациях России, стажироваться в организациях ближнего и дальнего зарубежья, преподавать в ведущих вузах и создавать собственные наукоемкие предприятия.

Objectives

Objectives. Nanoelectronics is concerned with the development of physical and technological foundations for the creation of integrated circuits comprised of elements whose topological dimensions do not exceed 100 nm. Nanotechnology includes the creation and use of materials, devices and technical systems whose functioning is determined by their nanostructure, i.e., comprising ordered fragments ranging from 1 to 100 nm in size. The present research is aimed at developing a concept for training highly qualified specialists in the field of nanoelectronics and nanotechnologies on the example of the Department of Nanoelectronics of the Institute of Advanced Technologies and Industrial Programming at the MIREA - Russian Technological University.

Methods

Methods. Promising approaches for supporting the educational process within the nanoindustry are analyzed and compared.

Results

Results. Three fundamental components of education in the field of nanoindustry can be distinguished: physical (the study and search for new promising physical effects); materials science, related to the study, search, and synthesis of new advanced materials; informatics (including mastering of modern software packages and programming languages for modeling a wide range of nanoindustry elements and materials).

Conclusions

Conclusions. All three fundamental components of education within nanoindustry have been effectively implemented by combining scientific laboratories and centers at the Department of Nanoelectronics. After graduating from the Department of Nanoelectronics, graduates can work for leading scientific institutes and technical organizations in Russia, intern at specialized organizations in neighboring and other countries, teach at leading universities, and start their own knowledge-intensive business.

наноэлектроникананотехнологииобразованиеnanoelectronicsnanotechnologyeducationReferencesTaniguchi N. On the basic concept of nano-technology. In: Proc. Int. Conf. Prod. Eng. Tokyo. Part II. Japan Society of Precision Engineering. 1974. P. 18-23.Taniguchi N. On the basic concept of nano-technology. In: Proc. Int. Conf. Prod. Eng. Tokyo. Part II. Japan Society of Precision Engineering. 1974. P. 18-23.Гусев А.И. Наноматериалы, наноструктуры, нанотехнологии. М.: Физматлит; 2009. 416 c.GusevA.I. Nanomaterialy, nanostruktury, nanotekhnologii (Nanomaterials, nanostructures, nanotechnologies). Moscow: Fizmatlit; 2009. 416 p. (in Russ.).BuryakovA.M.,etal.Effectsof crystallographicorientation of GaAs substrate and the period of plasmon grid on THz antenna performance. Ann. Phys. 2021;533(8):2100041. https://doi.org/10.1002/andp.202100041BuryakovA.M., et al. Effectsof crystallographicorientation of GaAs substrate and the period of plasmon grid on THz antenna performance. Ann. Phys. 2021;533(8):2100041. https://doi.org/10.1002/andp.202100041Saveliev D.V., Chashin D.V., Fetisov L.Y., Fetisov Y.K. Resonance magnetoelectric effect in a composite ferromagnet-dielectric-piezoelectric Langevin-type resonator. J. Phys. D: Appl. Phys. 2021;54(46):465002. https://doi.org/10.1088/1361-6463/ac1d72Saveliev D.V., Chashin D.V., Fetisov L.Y., Fetisov Y.K. Resonance magnetoelectric effect in a composite ferromagnet-dielectric-piezoelectric Langevin-type resonator. J. Phys. D: Appl. Phys. 2021;54(46):465002. https://doi.org/10.1088/1361-6463/ac1d72Atanova A.V., Zhigalina O.M., Khmelenin D.N., Orlov G.A., Seregin D.S., Sigov A.S., Vorotilov K.A. Microstructure analysis of porous lead zirconate-titanate films. J. Am. Ceram. Soc. 2022;105(1):639-652. https://doi.org/10.1111/jace.18064Atanova A.V., Zhigalina O.M., Khmelenin D.N., Orlov G.A., Seregin D.S., Sigov A.S., Vorotilov K.A. Microstructure analysis of porous lead zirconate-titanate films. J. Am. Ceram. Soc. 2022;105(1):639-652. https://doi.org/10.1111/jace.18064Vishnevskiy A.S., Vorotyntsev D.A., Seregin D.S., Vorotilov K.A. Effect of surface hydrophobisation on the properties of a microporous phenylene-bridged organosilicate film. J. Non Cryst. Solids. 2022;576:121258. https://doi.org/10.1016/j.jnoncrysol.2021.121258Vishnevskiy A.S., Vorotyntsev D.A., Seregin D.S., Vorotilov K.A. Effect of surface hydrophobisation on the properties of a microporous phenylene-bridged organosilicate film. J. Non Cryst. Solids. 2022;576:121258. https://doi.org/10.1016/j.jnoncrysol.2021.121258Berzin A.A., Sigov A.S., Morosov A.I. Phase diagram of the O(n) model with defects of «random local anisotropy» type. J. Magn. Magn. Mater. 2018;459:256-259. https://doi.org/10.1016/J.JMMM.2017.10.080Berzin A.A., Sigov A.S., Morosov A.I. Phase diagram of the O(n) model with defects of “random local anisotropy” type. J. Magn. Magn. Mater. 2018;459:256-259. https://doi.org/10.1016/J.JMMM.2017.10.080Берзин А.А., Морозов А.И., Сигов А.С. Анизотро -пия кубического типа, создаваемая дефектами типа «случайная локальная анизотропия», и фазовая диаграмма О(«)-модели. Физика тверДого тела. 2017;59(12):2420-2424. https://doi.org/10.21883/FTT.2017.12.45243.166Berzin A.A., Sigov A.S., Morozov A.I. Cubic-type anisotropy created by defects of “random local anisotropy” type and phase diagram of the O(n)-model. Phys. Solid State. 2017;59(12): 2448-2452. https://doi.org/10.1134/S1063783417120095 [Original Russian Text: Berzin A.A., Morozov A.I., Sigov A.S. Cubic-type anisotropy created by defects of “random local anisotropy” type and phase diagram of the O(n)-model. Fizika Tverdogo Tela. 2017;59(12):2420-2424 (in Russ.). https://doi.org/10.21883/FTT.2017.12.45243.166 ]Берзин А.А., Морозов А.И., Сигов А.С. Фаза Имри-Ма в нанокристаллическом ферромагнетике. Физика твердого тела. 2018;60(9):1689-1692. https://doi.org/10.21883/FTT.2018.09.46385.050Berzin A.A., Sigov A.S., Morosov A.I. The Imry-Ma phase in a nanocrystalline ferromagnet. Phys. the Solid State. 2018;60(9):1733-1736. https://doi.org/10.1134/S1063783418090056 [Original Russian Text: Berzin A.A., Morozov A.I., Sigov A.S. The Imry-Ma phase in a nanocrystalline ferromagnet. Fizika Tverdogo Tela. 2018;60(9):1689-1692 (in Russ.). https://doi.org/10.21883/FTT.2018.09.46385.050 ]Telegin A.V., Barsaume S., Bessonova V.A., Sukhorukov Y.P., Nosov A.P., Kimel' A.V., Gan'shina E.A., Yurasov A.N., Lysina E.A. Magnetooptical response to tunnel magnetoresistance in manganite films with a variant structure. J. Magn. Magn. Mater. 2018;459: 317-321. https://doi.org/10.1016/J.JMMM.2017.10.006Telegin A.V., Barsaume S., Bessonova V.A., Sukhorukov Y.P., Nosov A.P., Kimel' A.V., Gan'shina E.A., Yurasov A.N., Lysina E.A. Magnetooptical response to tunnel magnetoresistance in manganite films with a variant structure. J. Magn. Magn. Mater. 2018;459:317-321. https://doi.org/10.1016/J.JMMM.2017.10.006Ovcharenko S., Gaponov M., Klimov A., Tiercelin N., Pernod P., Mishina E., Sigov A., Preobrazhensky V. Photoinduced spin dynamics in a uniaxial intermetallic heterostructure TbCo2/FeCo. Sci. Rep. 2020;10(1):15785. https://doi.org/10.10328/s41598-020-72740-xOvcharenko S., Gaponov M., Klimov A., Tiercelin N., Pernod P., Mishina E., Sigov A., Preobrazhensky V. Photoinduced spin dynamics in a uniaxial intermetallic heterostructure TbCo2/FeCo. Sci. Rep. 2020;10(1):15785. https://doi.org/10.10328/s41598-020-72740-xVishnevskiy A.S., Naumov S., Seregin D.S., Wu Y.-H., Chuang W.-T., Rasadujjaman M., Zhang J., Leu J., Vorotilov K.A., Baklanov M.R. Effects of methyl terminal and carbon bridging groups ratio on critical properties of porous organosilicate glass films. Materials. 2020;13(20):4484. https://doi.org/10.3390/ma13204484Vishnevskiy A.S., Naumov S., Seregin D.S., Wu Y.-H., Chuang W.-T., Rasadujjaman M., Zhang J., Leu J., Vorotilov K.A., Baklanov M.R. Effects of methyl terminal and carbon bridging groups ratio on critical properties of porous organosilicate glass films. Materials. 2020;13(20):4484. https://doi.org/10.3390/ma13204484Saveliev D.V., Belyaeva I.A., Chashin D.V., Fetisov L.Y., Shamonin M. Large Wiedemann effect in a magnetoactive elastomer. J. Magn. Magn. Mater. 2020;511:166969. https://doi.org/10.1016/j.jmmm.2020.166969Saveliev D.V., Belyaeva I.A., Chashin D.V., Fetisov L.Y., Shamonin M. Large Wiedemann effect in a magnetoactive elastomer. J. Magn. Magn. Mater. 2020;511:166969. https://doi.org/10.1016/j.jmmm.2020.166969Burdin D.A., Chashin D.V., Ekonomov N.A., Gordeev S.N., Fetisov Y.K. Nonlinear magnetoelectric effect in a ferromagnetic-piezoelectric structure induced by rotating magnetic field. Smart Mater. Struct. 2019;28(10):107001. https://doi.org/10.1088/1361-665X/ab34e9Burdin D.A., Chashin D.V., Ekonomov N.A., Gordeev S.N., Fetisov Y.K. Nonlinear magnetoelectric effect in a ferromagnetic-piezoelectric structure induced by rotating magnetic field. Smart Mater. Struct. 2019;28(10):107001. https://doi.org/10.1088/1361-665X/ab34e9Fetisov L.Y., Chashin D.V., Plekhanova D.D., Saveliev D.V., Fetisov Y.K. Electrical field control of magnetoelectric effect in composite structures with single-crystal piezoelectrics. J. Magn. Magn. Mater. 2019;470:93-96. https://doi.org/10.1016/j.jmmm.2017.11.010Fetisov L.Y., Chashin D.V., Plekhanova D.D., Saveliev D.V., Fetisov Y.K. Electrical field control of magnetoelectric effect in composite structures with single-crystal piezoelectrics. J. Magn. Magn. Mater. 2019;470:93-96. https://doi.org/10.1016/j.jmmm.2017.11.010Sharaevskaya A.Y., Beginin E.N., Kalyabin D.V., Fetisov Y.K., Nikitov S.A. Surface spin waves in coupled easy-axis antiferromagnetic films. J. Magn. Magn. Mater. 2019;475:778-781. https://doi.org/10.1016/j.jmmm.2018.11.130Sharaevskaya A.Y., Beginin E.N., Kalyabin D.V., Fetisov Y.K., Nikitov S.A. Surface spin waves in coupled easy-axis antiferromagnetic films. J. Magn. Magn. Mater. 2019;475: 778-781. https://doi.org/10.1016/j.jmmm.2018.11.130Chashin D.V., Fetisov L.Y. Saveliev D.V., Fetisov Y.K. Magnetoelectric monolithic resonator based on the ferromagnetic-piezoelectric structure excited with a linear current. Sensors Letters. 2019;3(3):2500804. https://doi.org/10.1109/LSENS.2019.2895966Chashin D.V., Fetisov L.Y. Saveliev D.V., Fetisov Y.K. Magnetoelectric monolithic resonator based on the ferromagnetic-piezoelectric structure excited with a linear current. Sensors Letters. 2019;3(3):2500804. https://doi.org/10.1109/LSENS.2019.2895966Burdin D.A., Ekonomov N.A., Chashin D.V., Fetisov Y.K., Gordeev S.N. Magnetoelectric doubling and mixing of electric and magnetic field frequencies in a layered multiferroic heterostructure. J. Magn. Magn. Mater. 2019;485:36-42. https://doi.org/10.1016/j.jmmm.2019.04.037Burdin D.A., Ekonomov N.A., Chashin D.V., Fetisov Y.K., Gordeev S.N. Magnetoelectric doubling and mixing of electric and magnetic field frequencies in a layered multiferroic heterostructure. J. Magn. Magn. Mater. 2019;485:36-42. https://doi.org/10.1016/j.jmmm.2019.04.037Fetisov L.Y., Chashin D.V., Saveliev D.V., Afanasiev M.S., Simonov-Emel'yanov I.D., Vopson M.M., Fetisov Y.K. Magnetoelectric direct and converse resonance effects in a flexible ferromagnetic-piezoelectric polymer structure. J. Magn. Magn. Mater. 2019;485:251-256. https://doi.org/10.1016/j.jmmm.2019.04.085Fetisov L.Y., Chashin D.V., Saveliev D.V., Afanasiev M.S., Simonov-Emel'yanov I.D., Vopson M.M., Fetisov Y.K. Magnetoelectric direct and converse resonance effects in a flexible ferromagnetic-piezoelectric polymer structure. J. Magn. Magn. Mater. 2019;485:251-256. https://doi.org/10.1016/j.jmmm.2019.04.085Горбатова А.В., Хусяинов Д.И., Ячменев А.Э., Хабибуллин Р.А., Пономарев Д.С., Буряков А.М., Мишина Е.Д Фотопроводящий THz-детектор на основе сверхрешеточной гетероструктуры с плазмонным усилением. Письма в Журнал технической физики. 2020;46(22):10-14. http://doi.org/10.21883/PJTF.2020.22.50300.18442Gorbatova A.V., Khusyainov D.I., Yachmenev A.E., Khabibullin R.A., Ponomarev D.S., Buryakov A.M., Mishina E.D. A photoconductive THz detector based on superlattice heterostructure with plasmon amplification. Tech. Phys. Lett. 2020;46(22):1111-1115. http://doi.org/10.1134/S1063785020110218 [Original Russian Text: Gorbatova A.V., Khusyainov D.I., Yachmenev A.E., Khabibullin R.A., Ponomarev D.S., Buryakov A.M., Mishina E.D. A photoconductive THz detector based on superlattice heterostructure with plasmon amplification. Pis'ma v Zhurnal tekhnicheskoi fiziki. 2020;46(22):10-14 (in Russ.). http://doi.org/10.21883/PJTF.2020.22.50300.18442 ]

The authors declare that there are no conflicts of interest present.