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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mireabulletin</journal-id><journal-title-group><journal-title xml:lang="ru">Russian Technological Journal</journal-title><trans-title-group xml:lang="en"><trans-title>Russian Technological Journal</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2782-3210</issn><issn pub-type="epub">2500-316X</issn><publisher><publisher-name>RTU MIREA</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32362/2500-316X-2022-10-3-45-55</article-id><article-id custom-type="elpub" pub-id-type="custom">mireabulletin-521</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МИКРО- И НАНОЭЛЕКТРОНИКА. ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MICRO- AND NANOELECTRONICS. CONDENSED MATTER PHYSICS</subject></subj-group></article-categories><title-group><article-title>Высокотемпературные квантово-каскадные лазеры терагерцового диапазона: оптимизация дизайнов и экспериментальные результаты</article-title><trans-title-group xml:lang="en"><trans-title>High-temperature terahertz quantum-cascade lasers: design optimization and experimental results</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-2108-7024</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ушаков</surname><given-names>Д. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Ushakov</surname><given-names>D. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ушаков Дмитрий Владимирович - кандидат физико-математических наук, доцент, декан факультета радиофизики и компьютерных технологий.</p><p>220030, Минск, пр-т Независимости, д. 4. Scopus Author ID 6701760232, ResearcherID K-4878-2013</p></bio><bio xml:lang="en"><p>Dmitrii V. Ushakov - Cand. Sci. (Phys.-Math.), Associate Professor, Dean of the Faculty of Radiophysics and Computer Technologies.</p><p>4, Nezavisimosti pr., Minsk, 220030. Scopus Author ID 6701760232, ResearcherID K-4878-2013</p></bio><email xlink:type="simple">ushakovDVU@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Афоненко</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Afonenko</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Афоненко Александр Анатольевич - доктор физико-математических наук, доцент, заведующий кафедрой квантовой радиофизики и оптоэлектроники.</p><p>220030, Минск, пр-т Независимости, д. 4. Scopus Author ID 6603664811</p></bio><bio xml:lang="en"><p>Alexander A. Afonenko - Dr. Sci. (Phys.-Math.), Associate Professor, Head of the Department of Quantum Radiophysics and Optoelectronics.</p><p>4, Nezavisimosti pr., Minsk, 220030. Scopus Author ID 6603664811</p></bio><email xlink:type="simple">afonenko@bsu.by</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-0477-608X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Глинский</surname><given-names>И. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Glinskiy</surname><given-names>I. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Глинский Игорь Андреевич - младший научный сотрудник.</p><p>117105, Москва, Нагорный пр., д. 7, стр. 5. Scopus Author ID 57190616854, ResearcherID I-4334-2015</p></bio><bio xml:lang="en"><p>Igor A. Glinskiy - Junior Researcher.</p><p>7/5, Nagorny pr., Moscow, 117105. Scopus Author ID 57190616854, ResearcherID I-4334-2015</p></bio><email xlink:type="simple">glinskiy.igor@yandex.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-8414-7653</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Хабибуллин</surname><given-names>Р. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Khabibullin</surname><given-names>R. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Хабибуллин Рустам Анварович - кандидат физико-математических наук, доцент, ведущий научный сотрудник, ИСПЭ им. В.Г. Мокерова РАН, ведущий научный сотрудник, ФТИ им. А.Ф. Иоффе РАН. Scopus Author ID 55018400000, ResearcherID B-6594-2012.</p><p>117105, Москва, Нагорный пр., д. 7, стр. 5; 194021, Санкт-Петербург, Политехническая ул., д. 26</p></bio><bio xml:lang="en"><p>Rustam A. Khabibullin - Cand. Sci. (Phys.-Math.), Associate Professor, Leading Researcher, V.G. Mokerov Institute of UHFSE, RAS, Leading Researcher, Ioffe Institute, Scopus Author ID 55018400000, ResearcherID B-6594-2012</p><p>, https://orcid. org/0000-0002-8414-7653</p></bio><email xlink:type="simple">khabibullin@isvch.ru</email><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет</institution><country>Беларусь</country></aff><aff xml:lang="en"><institution>Belarusian State University</institution><country>Belarus</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Институт сверхвысокочастотной полупроводниковой электроники им. В.Г. Мокерова, Российская академия наук</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Институт сверхвысокочастотной полупроводниковой электроники им. В.Г. Мокерова, Российская академия наук; Физико-технический институт им. А.Ф. Иоффе, Российская академия наук</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences; Ioffe Institute</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2022</year></pub-date><pub-date pub-type="epub"><day>08</day><month>06</month><year>2022</year></pub-date><volume>10</volume><issue>3</issue><fpage>45</fpage><lpage>55</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Ушаков Д.В., Афоненко А.А., Глинский И.А., Хабибуллин Р.А., 2022</copyright-statement><copyright-year>2022</copyright-year><copyright-holder xml:lang="ru">Ушаков Д.В., Афоненко А.А., Глинский И.А., Хабибуллин Р.А.</copyright-holder><copyright-holder xml:lang="en">Ushakov D.V., Afonenko A.A., Glinskiy I.A., Khabibullin R.A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.rtj-mirea.ru/jour/article/view/521">https://www.rtj-mirea.ru/jour/article/view/521</self-uri><abstract><sec><title>Цели</title><p>Цели. Квантово-каскадные лазеры терагерцового диапазона (ТГц ККЛ) являются компактными твердотельными приборами с инжекционной накачкой, которые позволяют генерировать излучение в диапазоне от 1.2 до 5.4 ТГц. В полосе рабочих частот ТГц ККЛ находятся линии поглощения для ряда веществ, актуальных для медико-биологических и экологических приложений. Для широкого применения ТГц ККЛ в данных приложениях необходимо увеличивать рабочую температуру лазеров, что позволит уменьшить размеры и стоимость ТГц ККЛ, а также упростит использование данных ТГц-источников.</p></sec><sec><title>Методы</title><p>Методы. В работе для расчета электронного транспорта в ТГц ККЛ использовалась система балансных уравнений на основе базиса волновых функций с уменьшенными дипольными моментами туннельно-связанных состояний.</p></sec><sec><title>Результаты</title><p>Результаты. В результате расчетов предложен оригинальный зонный дизайн с периодом на основе трех GaAs/Al0.18Ga0.82As квантовых ям (КЯ) и максимумом усиления около 3.3 ТГц. На основе разработанного дизайна был экспериментально изготовлен ТГц ККЛ, что включало рост лазерной структуры методом молекулярно-лучевой эпитаксии, постростовой процессинг для формирования полосковых лазеров с двойным металлическим волноводом и сборку лазеров на теплоотводе. Изготовленные ТГц ККЛ продемонстрировали генерацию вплоть до температуры 125 К, что согласуется с проведенными расчетами. Также в работе проведено исследование зонных дизайнов на основе двух GaAs/AlxGa1–xAs КЯ с различным содержанием алюминия в барьерных слоях (x = 0.20, 0.25 и 0.30).</p></sec><sec><title>Выводы</title><p>Выводы. Рассчитанные температурные зависимости пикового усиления для двух-КЯ дизайнов с x &gt; 0.2 подтверждают возможность создания ТГц ККЛ, работающих при температурах свыше 200 К. Таким образом, в работе предложены двух-КЯ зонные дизайны, которые превосходят по максимальной рабочей температуре существующие рекордные высокотемпературные дизайны ТГц ККЛ.</p></sec></abstract><trans-abstract xml:lang="en"><sec><title>Objectives</title><p>Objectives. Terahertz quantum-cascade lasers (THz QCLs) are compact solid-state lasers pumped by electrical injection to generate radiation in the range from 1.2 to 5.4 THz. The THz QCL operating frequency band contains absorption lines for a number of substances that are suitable for biomedical and environmental applications. In order to reduce the size and cost of THz QCLs and simplify the use of THz sources in these applications, it is necessary to increase the operating temperature of lasers.</p></sec><sec><title>Methods</title><p>Methods. To calculate electron transport in THz QCLs, we used a system of balance equations based on wave functions with reduced dipole moments of tunnel-bound states.</p></sec><sec><title>Results</title><p>Results. As a result of the calculations, an original band design with a period based on three GaAs/Al0.18Ga0.82As quantum wells (QWs) and a gain maximum at about 3.3 THz was proposed. Based on the developed design, a THz QCL was fabricated, including the growth of a laser structure by molecular beam epitaxy, postgrowth processing to form strip lasers with a double metal waveguide, as well as an assembly of lasers mounted on a heat sink. The developed THz QCLs was capable of lasing at temperatures of up to 125 K as predicted by the performed calculations. We also studied band designs based on two GaAs/AlxGa1–xAs QWs having varying aluminum contents in the barrier layers (x = 0.20, 0.25, and 0.30).</p></sec><sec><title>Conclusions</title><p>Conclusions. The calculated temperature dependences of the peak gain for two-QW designs with x &gt; 0.2 confirm the possibility of creating THz QCLs operating at temperatures above 200 K. Thus, we have proposed two-QW band designs that outperform existing high-temperature designs in terms of maximum operating temperature.</p></sec></trans-abstract><kwd-group xml:lang="ru"><kwd>квантово-каскадный лазер</kwd><kwd>терагерцовый диапазон</kwd><kwd>квантовая яма</kwd><kwd>молекулярно- лучевая эпитаксия</kwd></kwd-group><kwd-group xml:lang="en"><kwd>quantum cascade laser</kwd><kwd>terahertz range</kwd><kwd>quantum well</kwd><kwd>molecular beam epitaxy</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена при финансовой поддержке гранта РТУ МИРЭА «Инновации в реализации приоритетных направлений развития науки и технологий» (НИЧ 28/21) в рамках теоретических исследований и при поддержке гранта Российского научного фонда № 21-72-30020 в рамках изготовления ТГц ККЛ</funding-statement><funding-statement xml:lang="en">The study was supported by grant of MIREA – Russian Technological University “Innovations in the implementation of priority areas in the science and technology development” (Research part 28/21) in the framework of theoretical research and with the support of the Russian Science Foundation, grant No. 21-72-30020, for the THz QCL fabrication</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Sampaolo A., Yu C., Wei T., Zifarelli A., Giglio M., Patimisco P., Zhu H., Zhu H., He L., Wu H., Dong L., Xu G., Spagnolo V. 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