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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mireabulletin</journal-id><journal-title-group><journal-title xml:lang="ru">Russian Technological Journal</journal-title><trans-title-group xml:lang="en"><trans-title>Russian Technological Journal</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2782-3210</issn><issn pub-type="epub">2500-316X</issn><publisher><publisher-name>RTU MIREA</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32362/2500-316X-2021-9-4-68-76</article-id><article-id custom-type="elpub" pub-id-type="custom">mireabulletin-345</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>СОВРЕМЕННЫЕ РАДИОТЕХНИЧЕСКИЕ И ТЕЛЕКОММУНИКАЦИОННЫЕ СИСТЕМЫ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MODERN RADIO ENGINEERING AND TELECOMMUNICATION SYSTEMS</subject></subj-group></article-categories><title-group><article-title>Аналитические выражения для электродинамических параметров экранированной микрополосковой линии</article-title><trans-title-group xml:lang="en"><trans-title>Analytical expressions for electrodynamic parameters of the shielded microstrip line</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Коваленко</surname><given-names>А. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Kovalenko</surname><given-names>A. N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Коваленко Александр Николаевич, д.т.н., профессор, кафедра радиоволновых процессов и технологий Института радиотехнических и телекоммуникационных систем </p><p>119454, Москва, пр-т Вернадского, д. 78</p></bio><bio xml:lang="en"><p>Alexander N. Kovalenko, Dr. Sci. (Eng.), Professor, Department of Radio Wave Processes and Technologies, Institute of Radio Engineering and Telecommunication Systems</p><p>78, Vernadskogo pr., Moscow, 119454 </p></bio><email xlink:type="simple">a_kovalenko@mirea.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ярлыков</surname><given-names>А. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Yarlykov</surname><given-names>A. D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ярлыков Алексей Дмитриевич, ассистент, кафедра радиоволновых процессов и технологий Института радиотехнических и телекоммуникационных систем</p><p>119454, Москва, пр-т Вернадского, д. 78 </p></bio><bio xml:lang="en"><p>Alexey D. Yarlykov, Assistant, Department of Radio Wave Processes and Technologies, Institute of Radio Engineering and Telecommunication Systems</p><p>78, Vernadskogo pr., Moscow, 119454 </p></bio><email xlink:type="simple">yarlykov@mirea.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>МИРЭА – Российский технологический университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>MIREA – Russian Technological University</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2021</year></pub-date><pub-date pub-type="epub"><day>26</day><month>08</month><year>2021</year></pub-date><volume>9</volume><issue>4</issue><fpage>68</fpage><lpage>76</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Коваленко А.Н., Ярлыков А.Д., 2021</copyright-statement><copyright-year>2021</copyright-year><copyright-holder xml:lang="ru">Коваленко А.Н., Ярлыков А.Д.</copyright-holder><copyright-holder xml:lang="en">Kovalenko A.N., Yarlykov A.D.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.rtj-mirea.ru/jour/article/view/345">https://www.rtj-mirea.ru/jour/article/view/345</self-uri><abstract><p>На базе электродинамической модели экранированной микрополосковой линии, построенной на основе проекционного метода при использовании чебышевского базиса, который в явном виде учитывает краевые особенности поля, разработана математическая модель микрополосковой линии с полосковым проводником, ширина которого не превышает высоты подложки. При этом плотность тока на полосковом проводнике аппроксимируется только одной базисной функцией. Представлены аналитические выражения в виде суммы медленно и быстро сходящихся рядов для определения основных электродинамических параметров линии – волнового сопротивления и коэффициента замедления. Вследствие логарифмических особенностей медленно сходящиеся ряды просуммированы и преобразованы в быстро сходящиеся степенные ряды. Помимо этого, для основных электродинамических параметров открытой микрополосковой линии в квазистатическом приближении приведены предельные выражения в виде несобственных интегралов. Вследствие логарифмических особенностей эти интегралы также преобразованы в быстро сходящиеся степенные ряды. В результате получены простые приближенные формулы, которые позволяют рассчитать коэффициент замедления и волновое сопротивление линии с погрешностью, не превышающей 1% при ширине полоскового проводника меньше удвоенной толщины подложки. Представлены результаты расчета электродинамических параметров, полученных на основе разработанной математической модели и на основе проекционного метода с точностью до 5 значащих цифр. Приведенные результаты позволяют установить границы применимости квазистатического приближения и определить погрешность расчета коэффициента замедления и волнового сопротивления с использованием полученных аналитических выражений. Она не превышает 0.1%, если ширина полоскового проводника меньше удвоенной толщины подложки в широком диапазоне изменения диэлектрической проницаемости подложки и частоты.</p></abstract><trans-abstract xml:lang="en"><p>On the basis of an electrodynamic model of a screened microstrip line, built on the basis of the projection method using the Chebyshev basis, which explicitly takes into account the edge features of the field, a mathematical model of a microstrip line with a strip conductor was developed. The line width does not exceed the height of the substrate. In this case, the current density on the strip conductor is approximated by only one basis function. Analytical expressions are presented in the form of a sum of slowly and rapidly converging series to determine the main electrodynamic parameters of the line – wave resistance and deceleration coefficient. Due to logarithmic features, slowly converging series are summed up and transformed into rapidly converging power series. In addition, limit expressions in the form of improper integrals are given for the main electrodynamic parameters of an open microstrip line in the quasi-static approximation. Due to the logarithmic features, these integrals are also converted to rapidly converging power series. As a result, simple approximate formulas were obtained. They allow calculating the deceleration coefficient and wave impedance of the line with an error not exceeding 1%, when the width of the strip conductor is less than twice the thickness of the substrate. The results of calculating the electrodynamic parameters obtained on the basis of the developed mathematical model and on the basis of the projection method with an accuracy of up to 5 significant digits are presented. These results make it possible to establish the limits of applicability of the quasi-static approximation and to determine the error in calculating the deceleration coefficient and wave resistance using the obtained analytical expressions. The error does not exceed 0.1%, if the width of the strip conductor is less than twice the thickness of the substrate in a wide range of changes in the substrate dielectric constant and frequency.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>микрополосковая линия с узким полосковым проводником</kwd><kwd>проекционный метод</kwd><kwd>чебышевский базис</kwd><kwd>коэффициент замедления</kwd><kwd>волновое сопротивление</kwd><kwd>быстро сходящиеся степенные ряды</kwd><kwd>квазистатическое приближение</kwd><kwd>высокая точность</kwd></kwd-group><kwd-group xml:lang="en"><kwd>microstrip line with a narrow strip conductor</kwd><kwd>projection method</kwd><kwd>Chebyshev basis</kwd><kwd>deceleration coefficient</kwd><kwd>wave impedance</kwd><kwd>rapidly converging power series</kwd><kwd>quasi-static approximation</kwd><kwd>high accuracy</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Коваленко А.Н. 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