mireabulletinRussian Technological JournalRussian Technological Journal2782-32102500-316XRTU MIREA10.32362/2500-316X-2021-9-3-40-48mireabulletin-326Research ArticleМИКРО- И НАНОЭЛЕКТРОНИКА. ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯMICRO- AND NANOELECTRONICS. CONDENSED MATTER PHYSICSМетоды оценки механических свойств изолирующих материалов с низкой диэлектрической проницаемостьюEvaluation methods of mechanical properties for low-k dielectricshttps://orcid.org/0000-0002-5174-3985ОвчинниковИ. С.OvchinnikovI. S.

Овчинников Иван Сергеевич, аспирант кафедры наноэлектроники Физико-технологического института

119454, Москва, пр-т Вернадского, д. 78

Ivan S. Ovchinnikov, Postgraduate Student, Department of Nanoelectronics, Institute of Physics and Technology

78, Vernadskogo pr., Moscow, 119454 

ivan-ovchinnikov@mail.ruМИРЭА – Российский технологический университетРоссияMIREA – Russian Technological UniversityRussian Federation202127062021934048Copyright © Овчинников И.С., 20212021Овчинников И.С.Ovchinnikov I.S.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.rtj-mirea.ru/jour/article/view/326

Представлены обзор и исследование современных методов оценки механических свойств изолирующих материалов с низкой диэлектрической проницаемостью. Определены основные особенности измерения модуля Юнга тонких пленок изолирующих материалов с низкой диэлектрической проницаемостью с использованием методов бриллюэновского рассеяния света, спектроскопии поверхностных акустических волн, пикосекундного лазерно-акустический метода, эллипсометрической порозиметрии, наноиндентирования и метода атомно-силовой микроскопии в различных режимах. Дана оценка латеральному разрешению и разрешению по глубине для указанных методов. Установлена степень сложности подготовки образцов для измерения указанными методами, а также являются ли измерения деструктивными по отношению к образцу. Проведено сравнение результатов оценки модуля Юнга изолирующих материалов с низкой диэлектрической проницаемостью, полученные указанными методами. В результате сравнительного анализа методов оценки механических свойств изолирующих материалов установлено, что метод атомно-силовой микроскопии в режиме количественного наномеханического картирования превосходит другие описанные методы как по латеральному разрешению (8 нм), так и по глубине (10 нм). Показано, что ввиду малой силы воздействия зонда атомно-силового микроскопа на поверхность метод не оказывает деструктивного воздействия на исследуемый образец. Кроме того, отсутствие необходимости создания специальных условий для проведения эксперимента (класс чистоты помещений, возможность эксперимента при условиях окружающей среды и т.д.) делает его относительно простым с точки зрения подготовки объекта исследования. Также установлено, что метод атомно-силовой микроскопии в режиме количественного наномеханического картирования позволяет формировать карту распределения модуля Юнга изолирующего материала в составе системы металлизации интегральных микросхем.

This review introduces the study of state-of-art methods for assessing the mechanical properties of insulating materials with low dielectric constant. The main features of measuring Young’s modulus of thin films insulating materials with low dielectric constant are determined by usage of Brillouin light scattering, surface acoustic wave spectroscopy, picosecond laser-acoustic method, ellipsometric porosimetry, nanoindentation and atomic force microscopy in various modes. The author estimated the optimum lateral and optimum depth resolution for each above method. The review analyzes the degree of sample preparation complexity for the measurements by these methods and describes what methods of measurement are destructive for the samples. Besides, the review makes a comparison for the results of evaluating Young’s modulus of insulating materials with low dielectric constant achieved by different methods. Comparative analysis of the methods for assessing mechanical properties lead us to the conclusion that the method of atomic force microscopy is superior to other methods described above, both in lateral (8 nm) and optimum depth (10 nm) resolution. It is shown that due to the small impact force of the atomic force microscope probe on the surface, the method does not have a destructive effect on the sample. In addition, there is no need to create special conditions for the experiment (e.g., the cleanliness level of the premises, the possibility of an experiment under environmental conditions, etc.). This makes the experiment relatively simple in terms of preparing the object of research. It has been also established that the method of atomic force microscopy in the mode of quantitative nanomechanical mapping allows forming a map of the distribution of the Young’s modulus of the insulating material as part of the metallization system of integrated circuits.

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The authors declare that there are no conflicts of interest present.