mireabulletinRussian Technological JournalRussian Technological Journal2782-32102500-316XRTU MIREA10.32362/2500-316X-2020-8-6-78-86mireabulletin-260Research ArticleМИКРО- И НАНОЭЛЕКТРОНИКА. ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯMICRO- AND NANOELECTRONICS. CONDENSED MATTER PHYSICSМеталинза на основе одиночных диэлектрических микрочастиц для фотопроводящих оптико-терагерцовых преобразователейAll-dielectric metalens based on a single colloidal particle for photoconductive optical-to-terahertz switcheshttps://orcid.org/0000-0002-0477-608XГлинскийИ. А.GlinskiyI. A.

Глинский Игорь Андреевич, ведущий инженер отдела разработки ИТ-решений Инжинирингового центра мобильных решений, ассистент кафедры наноэлектроники Физико-технологического института ФГБОУ ВО «МИРЭА – Российский технологический университет»

119454, Москва, пр-т Вернадского, д. 78

ResearcherID: I-4334-2015, Scopus Author ID: 57190616854

Igor A. Glinskiy, Leading Engineer, IT Solutions Development Department, Mobile Solutions Engineering Center, Assistant Department of Nanoelectronics, Institute of Physics and Technology MIREA – Russian Technological University

78, Vernadskogo pr., Moscow, 119454

ResearcherID: I-4334-2015, Scopus Author ID: 57190616854

glinskiy.igor@yandex.ruhttps://orcid.org/0000-0002-7932-1821ЗенченкоН. В.ZenchenkoN. V.

Зенченко Николай Владимирович, ведущий инженер отдела разработки ИТ-решений Инжинирингового центра мобильных решений, ассистент кафедры наноэлектроники Физико-технологического института ФГБОУ ВО «МИРЭА – Российский технологический университет»

119454, Москва, пр-т Вернадского, д. 78

ResearcherID: K-2233-2015, Scopus Author ID: 56891470400

Nikolay V. Zenchenko, Leading Engineer, IT Solutions Development Department, Mobile Solutions Engineering Center, Assistant Department of Nanoelectronics, Institute of Physics and Technology MIREA – Russian Technological University

78, Vernadskogo pr., Moscow, 119454

ResearcherID: K-2233-2015, Scopus Author ID: 56891470400

https://orcid.org/0000-0002-9567-8927ПономаревД. С.PonomarevD. S.

Пономарев Дмитрий Сергеевич, к.ф.-м.н., заместитель директора по научной работе, ведущий научный сотрудник ФГАНУ Институт сверхвысокочастотной полупроводниковой электроники имени В.Г. Мокерова Российской академии наук (ИСВЧПЭ РАН)

117105, Москва, Нагорный проезд, 7, стр.5

ResearcherID: K-1632-2014, Scopus Author ID: 37124831400

Dmitry S. Ponomarev, Ph.D. is Physics and Math, Deputy Director, Chief Researcher at V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of Russian Academy of Sciences (IUHFSE RAS)

Nagorny proezd, 7/5, Moscow, 117105

ResearcherID: K-1632-2014, Scopus Author ID: 37124831400

МИРЭА – Российский технологический университетРоссияMIREA – Russian Technological UniversityRussian FederationИнститут сверхвысокочастотной полупроводниковой электроники имени В.Г. Мокерова Российской академии наук (ИСВЧПЭ РАН)РоссияInstitute of Ultra High Frequency Semiconductor Electronics of RASRussian Federation202018122020867886Copyright © Глинский И.А., Зенченко Н.В., Пономарев Д.С., 20202020Глинский И.А., Зенченко Н.В., Пономарев Д.С.Glinskiy I.A., Zenchenko N.V., Ponomarev D.S.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.rtj-mirea.ru/jour/article/view/260

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The authors declare that there are no conflicts of interest present.