mireabulletinRussian Technological JournalRussian Technological Journal2782-32102500-316XRTU MIREA10.32362/2500-316X-2020-8-5-44-67mireabulletin-249Research ArticleМИКРО- И НАНОЭЛЕКТРОНИКА. ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯMICRO- AND NANOELECTRONICS. CONDENSED MATTER PHYSICSСегнетоэлектрическая память: современное производство и исследованияFerroelectric memory: state-of-the-art manufacturing and researchАбдуллаевД. А.AbdullaevD. A.

Абдуллаев Даниил Анатольевич, кандидат технических наук, младший научный сотрудник Института нанотехнологий микроэлектроники РАН; стажер-исследователь НОЦ «Технологический центр» ФГБОУ ВО «МИРЭА – Российский технологический уни- верситет». ResearcherID: AAO-5932-2020; Scopus Author ID: 56741027200119991, Москва, Ленинский проспект, д. 32А119454, Москва, пр-т Вернадского, д. 78

Daniil A. Abdullaev, Cand. Sci. (Engineering), Researcher of the Institute of Nanotechnology of Microelectronics RAS, Researcher of REC “Technological Center”, MIREA – Russian Technological University. ResearcherID: AAO-5932-2020; Scopus Author ID: 5674102720032A, Leninsky pr., Moscow 11999178, Vernadskogo pr., Moscow 119454

МиловановР. А.MilovanovR. A.

Милованов Роман Александрович, кандидат технических наук, заместитель начальника физико-технологического отдела Института нанотехнологий микроэлектроники РАН; старший научный сотрудник УНО «Электроника» ФГБОУ ВО «МИРЭА – Российский технологический университет». Scopus Author ID: 55794840600119991, Москва, Ленинский проспект, д. 32А119454, Москва, пр-т Вернадского, д. 78

Roman A. Milovanov, Cand. Sci. (Engineering), Deputy Head of Physics and Technology Department Institute of Nanotechnology of Microelectronics RAS, Senior Researcher ESU "Electronics", MIREA – Russian Technological University. Scopus Author ID: 5579484060032A, Leninsky pr., Moscow 11999178, Vernadskogo pr., Moscow 119454 

ВолковР. Л.VolkovR. L.

Волков Роман Леонидович, кандидат физико-математических наук, старший научный сотрудник научно-исследовательской лаборатории электронной микроскопии, старший преподаватель кафедры общей физики. ResearcherID: C-8431-2017; Scopus Author ID: 52564796300124498, Москва, Зеленоград, Площадь Шокина, д. 1

Roman L. Volkov, Cand. Sci. (Physics and Mathematics), Senior Researcher of Electron Microscopy Laboratory, Senior Lecturer of General Physics Chair. ResearcherID: C-8431-2017; Scopus Author ID: 525647963001, Shokin pl., Zelenograd, Moscow 124498

БоргардтН. И.BorgardtN. I.

Боргардт Николай Иванович, доктор физико-математических наук, профессор, начальник научно-исследовательской лаборатории электронной микроскопии, руководитель Центра коллективного пользования «Диагностика и модификация микроструктур и нанообъектов», заведующий кафедры общей физики. ResearcherID: I-7869-2014; Scopus Author ID: 6603557021124498, Москва, Зеленоград, Площадь Шокина, д. 1

Nikolay I. Borgardt, Dr. Sci. (Physics and Mathematics), Professor, Head of Electron Microscopy Laboratory, Head of the Center for Collective Use "Diagnostics and Modification of Microstructures and Nano-Objects", Head of General Physics Chair. ResearcherID: I-7869-2014; Scopus Author ID: 66035570211, Shokin pl., Zelenograd, Moscow 124498

ЛанцевА. Н.LantsevA. N.

Ланцев Андрей Николаевич, генеральный директор119330, Москва, ул. Дружбы, д. 10Б

Andrey N. Lantsev, General Director10B, Druzhby ul., Moscow 119330

https://orcid.org/0000-0003-4675-2067ВоротиловК. А.VorotilovK. A.

Воротилов Константин Анатольевич, доктор технических наук, профессор, директор НОЦ «Технологический центр». ResearcherID A-3331-2011; Scopus Author ID: 7004711340119454, Москва, пр-т Вернадского, д. 78

Konstantin A. Vorotilov, Dr. Sci. (Engineering), Professor, Director of REC “Technological Center”. ResearcherID A-3331-2011; Scopus Author ID: 700471134078, Vernadskogo pr., Moscow 119454

vorotilov@mirea.ruСиговА. С.SigovA. S.

Сигов Александр Сергеевич, академик РАН, президент. ResearcherID L-4103-2017; Scopus Author ID: 35557510600119454, Москва, пр-т Вернадского, д. 78

Alexander S. Sigov, Academician of RAS, President. ResearcherID L-4103-2017; Scopus Author ID: 3555751060078, Vernadskogo pr., Moscow 119454

МИРЭА – Российский технологический университет; Институт нанотехнологий микроэлектроники РАНРоссияMIREA – Russian Technological University; Institute of Nanotechnology of Microelectronics of the Russian Academy of SciencesRussian FederationНациональный исследовательский университет «МИЭТ»РоссияNational Research University of Electronic Technology – MIETRussian FederationЗАО СканРоссияCJSC ScanRussian FederationМИРЭА – Российский технологический университетРоссияMIREA – Russian Technological UniversityRussian Federation202020102020854467Copyright © Абдуллаев Д.А., Милованов Р.А., Волков Р.Л., Боргардт Н.И., Ланцев А.Н., Воротилов К.А., Сигов А.С., 20202020Абдуллаев Д.А., Милованов Р.А., Волков Р.Л., Боргардт Н.И., Ланцев А.Н., Воротилов К.А., Сигов А.С.Abdullaev D.A., Milovanov R.A., Volkov R.L., Borgardt N.I., Lantsev A.N., Vorotilov K.A., Sigov A.S.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.rtj-mirea.ru/jour/article/view/249

Полупроводниковая индустрия остро нуждается в новых видах запоминающих устройств, сочетающих скоростные характеристики оперативной памяти с энергонезависимостью Flash памяти. Такая универсальная память должна обладать неограниченным числом циклов записи/чтения, низким энергопотреблением и стоимостью, обеспечивать высокую плотность записи информации и потенциал к дальнейшему масштабированию. Сегнетоэлектрическая память FRAM уже более 20 лет рассматривается в качестве одного из кандидатов на роль универсальной памяти. Зарядовый принцип записи, основанный на переключении вектора спонтанной поляризации, обеспечивает высокую энергоэффективность, наряду с энергонезависимостью, высокими скоростями, практически неограниченным числом циклов записи/чтения, длительным временем хранения, а также стойкостью к воздействию специальных факторов. Однако, обладая значительным потенциалом, сегнетоэлектрическая память все еще не заняла значительной доли рынка энергонезависимых запоминающих устройств в связи с проблемами достижения высоких уровней интеграции. В работе представлен анализ современного состояния производства FRAM. Исследована структура сегнетоэлектрических конденсаторов и ячеек памяти основных производителей коммерчески доступных FRAM – компаний Texas Instruments, Cypress Semiconductor, Fujitsu и Lapis Semiconductor, проведено сравнение полученных результатов с данными производителей. Все ячейки памяти используют сегнетоэлектрический конденсатор на основе слоя цирконата-титаната свинца PZT толщиной около 70 нм и электродов из IrOx/Ir или Pt. Передовым технологическим процессом производства FRAM устройств остается 130 нм КМОП процесс, используемый на фабах Texas Instruments. Обсуждаются возможные пути преодоления проблем скейлинга и дальнейшего развития технологии сегнетоэлектрических устройств, включая ALD-технологии создания бинарных сегнетоэлектриков, пьезоэлектронные транзисторы, структуры на основе двумерных полупроводников и пр. Удастся ли FRAM технологии расширить область применений и разрешить одно из основных противоречий современных вычислительных устройств между быстродействующим процессором и относительно медленной памятью, зависит от решения вопросов интеграции новых технологических решений.

Semiconductor industry calls for emerging memory, demonstrating high speed (like SRAM or DRAM), nonvolatility (like Flash NAND), high endurance and density, good scalability, reduced energy consumption and reasonable cost. Ferroelectric memory FRAM has been considered as one of the emerging memory technologies for over 20 years. FRAM uses polarization switching that provides low power consumption, nonvolatility, high speed and endurance, robust data retention, and resistance to data corruption via electric, magnetic fields and radiation. Despite the advantages, market share held by FRAM manufacturers is insignificant due to scaling challenges. State-of-the-art FRAM manufacturing is studied in this paper. Ferroelectric capacitors and memory cells made by main commercial FRAM manufactures (Texas Instruments, Cypress Semiconductor, Fujitsu и Lapis Semiconductor) are explored. All memory cells are based on the lead zirconate titanate PZT capacitor with the thickness of about 70 nm and IrOx/Ir or Pt electrodes. The leading FRAM technology remains the 130 nm node CMOS process developed at Texas Instruments fabs. New approaches to further scaling and new devices based on ferroelectrics are reviewed, including binary ferroelectrics deposited by ALD techniques, piezoelectronic transistors, ferroelectric/2D-semiconductor transistor structures, and others. Whether FRAM technology will be able to resolve one of the main contradictions between a high-speed processor and a relatively slow nonvolatile memory depends on the success of the new technologies integration.

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The authors declare that there are no conflicts of interest present.