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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mireabulletin</journal-id><journal-title-group><journal-title xml:lang="ru">Russian Technological Journal</journal-title><trans-title-group xml:lang="en"><trans-title>Russian Technological Journal</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2782-3210</issn><issn pub-type="epub">2500-316X</issn><publisher><publisher-name>RTU MIREA</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32362/2500-316X-2020-8-1-58-66</article-id><article-id custom-type="elpub" pub-id-type="custom">mireabulletin-202</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МИКРО- И НАНОЭЛЕКТРОНИКА. ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MICRO- AND NANOELECTRONICS. CONDENSED MATTER PHYSICS</subject></subj-group></article-categories><title-group><article-title>Лазерно-индуцированная спиновая динамика в пленке железо-иттриевого граната, легированного ионами Si</article-title><trans-title-group xml:lang="en"><trans-title>Laser-induced spin dynamics in the iron-yttrium garnet film doped with Si ions</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-6360-3672</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Овчаренко</surname><given-names>С. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Ovcharenko</surname><given-names>S. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Овчаренко Сергей Вадимович – аспирант кафедры наноэлектроники Физико - технологического института</p><p>119454, Москва, пр-т Вернадского, д. 78</p></bio><bio xml:lang="en"><p>Sergey V. Ovcharenko – Postgraduate Student of the Department of Nanoelectronics, Institute of Physics and Technology</p><p>78, Vernadskogo pr., Moscow 119454</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-0003-5054</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гапонов</surname><given-names>М. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Gaponov</surname><given-names>M. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Гапонов Михаил Станиславович – аспирант кафедры наноэлектроники Физико - технологического института</p><p>119454, Москва, пр-т Вернадского, д. 78</p></bio><bio xml:lang="en"><p>Mikhail S. Gaponov – Postgraduate Student of the Department of Nanoelectronics, Institute of Physics and Technology</p><p>78, Vernadskogo pr., Moscow 119454</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ильин</surname><given-names>Н. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Ilyin</surname><given-names>N. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ильин Никита Александрович – кандидат физико-математических наук, доцент кафедры физики Физико - технологического института. Author ID: 18037137700</p><p>119454, Москва, пр-т Вернадского, д. 78</p></bio><bio xml:lang="en"><p>Nikita A. Ilyin – Сand. Sci. (Physics and Mathematics), Associate Professor of the Department of Physics, Institute of Physics and Technology. Author ID: 18037137700</p><p>78, Vernadskogo pr., Moscow 119454</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Логунов</surname><given-names>М. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Logunov</surname><given-names>M. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Логунов Михаил Владимирович – доктор физико-математических наук, профессор, ведущий научный сотрудник. ResearcherID: J-9486-2013</p><p>125009, Москва, ул. Моховая, д. 11, корп.7</p></bio><bio xml:lang="en"><p>Mikhail V. Logunov – Dr. Sci. (Physics and Mathematics), Professor, Leading Researcher. ResearcherID: J-9486-2013</p><p>125009, Moscow, 11 Mokhovaya St., building 7</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-0979-8085</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Wu</surname><given-names>Anhua</given-names></name><name name-style="western" xml:lang="en"><surname>Wu</surname><given-names>Anhua</given-names></name></name-alternatives><bio xml:lang="ru"><p>Anhua Wu – профессор Центра исследования кристаллов</p><p>200050, Шанхай, 1295 Dingxi Rd</p></bio><bio xml:lang="en"><p>Anhua Wu – Professor, Center for Crystal Research</p><p>200050, Shanghai, 1295 Dingxi Rd</p></bio><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-0387-5016</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мишина</surname><given-names>Е. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Mishina</surname><given-names>E. D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Мишина Елена Дмитриевна – доктор физико-математических наук, профессор, профессор кафедры наноэлектроники Физико - технологического института. ResearcherID: D-6402-2014, Scopus Author ID: 7005350309</p><p>119454, Москва, пр-т Вернадского, д. 78</p></bio><bio xml:lang="en"><p>Elena D. Mishina – Dr. Sci. (Physics and Mathematics), Professor of the Department of Nanoelectronics, Institute of Physics and Technology. ResearcherID: D-6402-2014, Scopus Author ID: 7005350309</p><p>78, Vernadskogo pr., Moscow 119454</p></bio><email xlink:type="simple">mishina_elena57@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>МИРЭА – Российский технологический университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>MIREA – Russian Technological University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Институт радиотехники и электроники имени В. А. Котельникова РАН</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Kotelnikov Institute of Radioengineering &amp; Electronics of Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Шанхайский институт керамики, Китайская академия наук</institution><country>Китай</country></aff><aff xml:lang="en"><institution>Institute of Ceramics, Shanghai, Chinese Academy of Sciences</institution><country>China</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2020</year></pub-date><pub-date pub-type="epub"><day>03</day><month>03</month><year>2020</year></pub-date><volume>8</volume><issue>1</issue><fpage>58</fpage><lpage>66</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Овчаренко С.В., Гапонов М.С., Ильин Н.А., Логунов М.В., Wu A., Мишина Е.Д., 2020</copyright-statement><copyright-year>2020</copyright-year><copyright-holder xml:lang="ru">Овчаренко С.В., Гапонов М.С., Ильин Н.А., Логунов М.В., Wu A., Мишина Е.Д.</copyright-holder><copyright-holder xml:lang="en">Ovcharenko S.V., Gaponov M.S., Ilyin N.A., Logunov M.V., Wu A., Mishina E.D.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.rtj-mirea.ru/jour/article/view/202">https://www.rtj-mirea.ru/jour/article/view/202</self-uri><abstract><p>Непрерывный рост объема хранимых и обрабатываемых данных проводит к ужесточению требований к носителям информации. Наиболее распространенная в настоящее время технология хранения информации основана на магнитных материалах, где информации в виде «0» и «1» ставится в соответствие локальное направление намагниченности, определяемое внешним магнитным полем, создаваемым устройством записи. Известно, что данный подход имеет фундаментальное ограничение по скорости записи, которое почти достигнуто. Также ужесточаются требования к энергоэффективности носителей данных. Данные обстоятельства приводят к развитию альтернативных подходов к записи информации. Один из таких подходов был продемонстрирован в области сверхбыстрого оптомагнетизма, которая бурно развивается в последние 20 лет. Этот подход заключается в записи информации короткими оптическими импульсами без приложения внешнего магнитного поля. Однако он требует фундаментальных исследований физических процессов, а также материалов, в которых возможно управление намагниченностью короткими оптическими импульсами. В данной работе рассматривается спиновая динамика в магнитном диэлектрике: пленке железо-иттриевого граната легированного кремнием. Исследования проводились с помощью методики накачки – зондирования на временном диапазоне до 800 нс. Размер пятна составил 30 мкм, длительность оптического импульса 35 фс, плотность мощности излучения накачки около 50 мДж/см2. Показано, что изменение констант магнитокристаллической анизотропии вследствие воздействия на структуру возбуждающим импульсом вызывает долгозатухающую прецессию намагниченности с периодом порядка 200 пс. Получены и проанализированы зависимости амплитуды, фазы и затухания прецессии от величины внешнего магнитного поля в диапазоне до 1.84 кЭ. Изученные процессы могут быть рассмотрены в рамках модели Ландау-Лифшица-Гилберта, и представлять интерес для оптического переключения намагниченности, а также создания различных спинтронных устройств. Показано, что пленки железо-иттриевого граната, легированного кремнием, являются перспективным материалом для магнитных носителей информации на основе сверхбыстрого оптомагнетизма.</p></abstract><trans-abstract xml:lang="en"><p>A continuous increase in the volume of stored and processed data leads to stricter requirements for storage media. The most common information storage technology is currently based on magnetic materials, where information in the form of "0" and "1" is associated with the local direction of magnetization, determined by the external magnetic field created by the recording device. It is known that this approach has fundamental limitations on the recording speed which is almost achieved. The requirements for energy efficiency of storage media are also being made stricter. These circumstances lead to the development of alternative approaches to recording information. One of these approaches has been demonstrated in the field of ultrafast opto-magnetism, which has been booming over the past 20 years. It consists in recording information with short optical pulses without the application of an external magnetic field. However, it requires fundamental studies of physical processes, as well as materials, in which magnetization can be controlled by short optical pulses. In this paper, we consider the spin dynamics in a magnetic dielectric: a film of iron - yttrium garnet doped with silicon. The studies were carried out using the pump – probe technique over a time range of up to 800 ns. The spot size was 30 μm, the optical pulse duration was 35 fs, and the pump fluence was about 50 mJ/cm2. It is shown that a change in the magnetocrystalline anisotropy constants due to the action of a pump pulse on the structure causes a long-decaying magnetization precession with a period of about 200 ps. The dependences of the amplitude, phase, and decay of the precession on the magnitude of the external magnetic field in the range up to 1.84 kOe were obtained and analyzed. The studied processes can be considered on the basis of the Landau-Lifshitz-Gilbert model, and be of interest for the optical switching of magnetization, as well as the creation of various spintronic devices. It is shown that films of iron-yttrium garnet doped with silicon are a promising material for magnetic information carriers based on ultrafast opto-magnetism.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>фотоиндуцированная сверхбыстрая динамика</kwd><kwd>спинтроника</kwd><kwd>доменная структура</kwd><kwd>оптическое управление намагниченностью</kwd><kwd>фемтосекундное лазерное излучение</kwd></kwd-group><kwd-group xml:lang="en"><kwd>photoinduced ultrafast dynamics</kwd><kwd>spintronics</kwd><kwd>domain structure</kwd><kwd>optical control of magnetization</kwd><kwd>femtosecond laser radiation</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена при поддержке РФФИ (грант № 18-52-53030 ГФЕН_а). Образцы изготовлены М.В. 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