<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mireabulletin</journal-id><journal-title-group><journal-title xml:lang="ru">Russian Technological Journal</journal-title><trans-title-group xml:lang="en"><trans-title>Russian Technological Journal</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2782-3210</issn><issn pub-type="epub">2500-316X</issn><publisher><publisher-name>RTU MIREA</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32362/2500-316X-2019-7-4-44-53</article-id><article-id custom-type="elpub" pub-id-type="custom">mireabulletin-162</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>СОВРЕМЕННЫЕ РАДИОТЕХНИЧЕСКИЕ И ТЕЛЕКОММУНИКАЦИОННЫЕ СИСТЕМЫ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MODERN RADIO ENGINEERING AND TELECOMMUNICATION SYSTEMS</subject></subj-group></article-categories><title-group><article-title>Номинальные и эффективные значения параметров катушек индуктивности и конденсаторов на высоких частотах</article-title><trans-title-group xml:lang="en"><trans-title>Nominal and Actual Values of Inductor and Capacitor Parameters at High Frequencies</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гуров</surname><given-names>Е. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Gurov</surname><given-names>E. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>аспирант кафедры конcтруирования и производства радиоэлектронных средств Института радиотехнических и телекоммуникационных систем</p><p>119454, Россия, Москва, пр-т Вернадского, д. 78</p></bio><bio xml:lang="en"><p>Postgraduate Student of the Chair of Design and Production of Radio Electronic Equipment, Institute of Radio Engineering and Telecommunication Systems</p><p>78, Vernadskogo pr., Moscow 119454, Russia</p></bio><email xlink:type="simple">gurov.yegor@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Увайсов</surname><given-names>С. У.</given-names></name><name name-style="western" xml:lang="en"><surname>Uvaysov</surname><given-names>S. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>доктор технических наук, заведующий кафедрой конcтруирования и производства радиоэлектронных средств Института радиотехнических и телекоммуникационных систем</p><p>119454, Россия, Москва, пр-т Вернадского, д. 78</p></bio><bio xml:lang="en"><p>Dr. of Sci. (Engineering), Head of the Chair of Design and Production of Radio Electronic Equipment, Institute of Radio Engineering and Telecommunication Systems</p><p>78, Vernadskogo pr., Moscow 119454, Russia</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Увайсова</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Uvaysova</surname><given-names>A. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>аспирант кафедры конcтруирования и производства радиоэлектронных средств Института радиотехнических и телекоммуникационных систем</p><p>119454, Россия, Москва, пр-т Вернадского, д. 78</p></bio><bio xml:lang="en"><p>Postgraduate Student of the Chair of Design and Production of Radio Electronic Equipment, Institute of Radio Engineering and Telecommunication Systems</p><p>78, Vernadskogo pr., Moscow 119454, Russia</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Увайсова</surname><given-names>С. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Uvaysova</surname><given-names>S. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>аспирант Департамента компьютерной инженерии</p><p>123592, Россия, Москва, Таллинская ул., д.34</p></bio><bio xml:lang="en"><p>Postgraduate Student of the Department School of Computer Engineering</p><p>34, Tallinskaya st., Moscow 123592, Russia</p></bio><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>МИРЭА – Российский технологический университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>MIREA – Russian Technological University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Национальный исследовательский университет «Высшая школа экономики»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>National Research University «Higher School of Economics»</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2019</year></pub-date><pub-date pub-type="epub"><day>10</day><month>08</month><year>2019</year></pub-date><volume>7</volume><issue>4</issue><fpage>44</fpage><lpage>53</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Гуров Е.В., Увайсов С.У., Увайсова А.С., Увайсова С.С., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Гуров Е.В., Увайсов С.У., Увайсова А.С., Увайсова С.С.</copyright-holder><copyright-holder xml:lang="en">Gurov E.V., Uvaysov S.S., Uvaysova A.S., Uvaysova S.S.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.rtj-mirea.ru/jour/article/view/162">https://www.rtj-mirea.ru/jour/article/view/162</self-uri><abstract><p>Индуктивность катушек и емкость конденсаторов представляются физическими величинами, зависящими от геометрических размеров, конфигурации компонентов, параметров окружающей среды, причем эти величины не зависят от частоты протекающего через них переменного тока. Полное сопротивление реактивных компонентов, без учета активной составляющей, определяется их индуктивностью или емкостью, соответственно. Такое утверждение справедливо для частот, значительно более низких по сравнению с собственной резонансной частотой компонента, ближе к которой всё больший вклад вносят паразитные параметры. Поэтому вводятся понятия эффективной индуктивности и эффективной емкости, значения которых отличаются от номинальных и зависят от частоты. Данные величины предоставляются производителями компонентов. Эффективные индуктивность и емкость дают более точное значение полного сопротивления в окрестности рассматриваемой частоты. Если имеет место существенное отклонение частоты от рассматриваемой, ошибка может оказаться даже больше, чем при использовании номинальных значений. При проектировании высокочастотных цепей, таких, как аналоговые фильтры и согласующие цепи, частотную характеристику определяют импедансы компонентов, а не их номинальные значения. Таким образом, расчетные значения должны быть близки именно к эффективным номиналам. Целью данной статьи является обоснование случаев необходимости применения эффективных значений реактивных компонентов взамен номинальных.</p></abstract><trans-abstract xml:lang="en"><p>Coil inductance and capacitor capacitance depend on overall dimensions, structure, and ambient factors. They do not vary with frequency. Reactive component impedance is determined by inductance or capacitance respectively, if active resistance is not considered. This is true for the frequencies which are significantly lower than the self-resonant frequency of the component. Parasitic parameters contribution increases on approaching the self-resonant frequency. Therefore, the componentʼs actual inductance and actual capacitance on operating frequency are defined. They are provided by manufacturers and differ from the nominal values. The actual values provide more accurate impedance of components near the considered frequency. Significant deviation from the considered frequency can cause impedance mismatch even more than the nominal values can provide. Frequency response of the high-frequency circuits such as analog filters and impedance match networks are determined by components impedance, not the nominal values. Thus, calculated values must be close to the actual values. The purpose of this article is to justify actual values application instead of nominal values.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>катушка индуктивности</kwd><kwd>индуктивность</kwd><kwd>конденсатор</kwd><kwd>керамический конденсатор</kwd><kwd>емкость</kwd><kwd>полное сопротивление</kwd><kwd>реактивное сопротивление</kwd></kwd-group><kwd-group xml:lang="en"><kwd>inductor</kwd><kwd>inductance</kwd><kwd>capacitor</kwd><kwd>MLCC</kwd><kwd>capacitance</kwd><kwd>impedance</kwd><kwd>reactance</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Gatous O.M.O., Pissolato J. Frequency-dependent skin-effect formulation for resistance and internal inductance of a solid cylindrical conductor // In: IEE Proceed. – Microwaves, Antennas and Propagation. 2004. V. 151(3). P. 212–216. https://doi.org/10.1049/ip-map:20040469</mixed-citation><mixed-citation xml:lang="en">Gatous O.M.O., Pissolato J. Frequency-dependent skin-effect formulation for resistance and internal inductance of a solid cylindrical conductor. In: IEE Proceed. Microwaves, Antennas and Propagation. 2004; 151(3):212-216. https://doi.org/10.1049/ip-map:20040469</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Raven M.S. Experimental measurements of the skin effect and internal inductance at low frequencies // Acta Technica CSAV (Ceskoslovensk Akademie Ved). 2015. № 60. P. 51–69.</mixed-citation><mixed-citation xml:lang="en">Raven M.S. Experimental measurements of the skin effect and internal inductance at low frequencies. Acta Technica CSAV (Ceskoslovensk Akademie Ved.). 2015; 60:51-69.</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Introduction to capacitor technologies. KEMET Electronics Corporation [Электронный ресурс] – URL: http://www.kemet.com/Lists/TechnicalArticles/Attachments/6/What%20is%20a%20Capacitor.pdf (дата обращения: 02.07.2019).</mixed-citation><mixed-citation xml:lang="en">Raven M.S. Experimental measurements of the skin effect and internal inductance at low frequencies. Acta Technica CSAV (Ceskoslovensk Akademie Ved.). 2015; 60:51-69.</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Zumbahlen H. Basic Linear Design. Chapter 10: Passive components. Analog Devices, Inc., 2007 [Электронный ресурс] – URL: https://www.analog.com/media/en/training-seminars/design-handbooks/Basic-Linear-</mixed-citation><mixed-citation xml:lang="en">Introduction to capacitor technologies. KEMET Electronics Corporation URL: http://www.kemet.com/Lists/TechnicalArticles/Attachments/6/What%20is%20a%20Capacitor.pdf. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Design/Chapter10.pdf (дата обращения: 02.07.2019).</mixed-citation><mixed-citation xml:lang="en">Introduction to capacitor technologies. KEMET Electronics Corporation URL: http://www.kemet.com/Lists/TechnicalArticles/Attachments/6/What%20is%20a%20Capacitor.pdf. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">Caio M., Pichorim S. Self-resonant frequencies of air-core single-layer solenoid coils calculated by a simple method // Electrical Engineering. 2014. № 97. С. 57–64. https://doi.org/10.1007/s00202-014-0312-3.</mixed-citation><mixed-citation xml:lang="en">Zumbahlen H. Basic Linear Design. Chapter 10: Passive components. Analog Devices, Inc., 2007. URL: https://www.analog.com/media/en/training-seminars/design-handbooks/Basic-Linear-Design/Chapter10.pdf. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Green L. RF-inductor modeling for the 21st century. EDN. September 2001 [Электронный ресурс] – URL: https://m.eet.com/media/1142818/19256-159688.pdf (дата обращения: 02.07.2019).</mixed-citation><mixed-citation xml:lang="en">Zumbahlen H. Basic Linear Design. Chapter 10: Passive components. Analog Devices, Inc., 2007. URL: https://www.analog.com/media/en/training-seminars/design-handbooks/Basic-Linear-Design/Chapter10.pdf. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">S-parameters and SPICE models. Coilcraft [Электронный ресурс] – URL: https://www.coilcraft.com/models.cfm (дата обращения: 02.07.2019).</mixed-citation><mixed-citation xml:lang="en">Caio M., Pichorim S. Self-resonant frequencies of air-core single-layer solenoid coils calculated by a simple method. Electrical Engineering. 2014; 97(1):57-64. https://doi.org/10.1007/s00202-014-0312-3.</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">S-parameter &amp; Equivalent Circuit Model. TDK [Электронный ресурс] – URL: https://product.tdk.com/info/en/technicalsupport/tvcl/general/mlcc.html (дата обращения: 02.07.2019).</mixed-citation><mixed-citation xml:lang="en">Caio M., Pichorim S. Self-resonant frequencies of air-core single-layer solenoid coils calculated by a simple method. Electrical Engineering. 2014; 97(1):57-64. https://doi.org/10.1007/s00202-014-0312-3.</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">Prymak J., Randall M., Blais P., Long B. Why that 47 uF capacitor drops to 37 uF, 30 uF, or lower. Procced. CARTS USA 2008. 28 Symposium for Passive Electronics, March, Newport Beach, CA. URL: https://www.researchgate.net/publication/229019152_Why_that_47_uF_capacitor_drops_to_37_uF_30_uF_or_lower (дата обращения: 02.07.2019).</mixed-citation><mixed-citation xml:lang="en">Green L. RF-inductor modeling for the 21st century. EDN. September 2001. URL: https://m.eet.com/media/1142818/19256-159688.pdf. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">Technical Terms RF Inductor. Murata Manufacturing Co., Ltd. [Электронный ресурс] – URL: https://www.murata.com/en-eu/products/inductor/chip/learn/glossary (дата обращения: 02.07.2019).</mixed-citation><mixed-citation xml:lang="en">Green L. RF-inductor modeling for the 21st century. EDN. September 2001. URL: https://m.eet.com/media/1142818/19256-159688.pdf. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">Скрипников Ю.Ф Колебательный контур. М.: Энергия, 1970. 128 с.</mixed-citation><mixed-citation xml:lang="en">S-parameters and SPICE models. Coilcraft. URL: https://www.coilcraft.com/models.cfm. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">Medhurst R.G. (GEC Research Labs.) H. F. Resistance and Self-Capacitance of Single-Layer Solenoids. Wireless Engineer. February 1947. P. 35–43.</mixed-citation><mixed-citation xml:lang="en">S-parameters and SPICE models. Coilcraft. URL: https://www.coilcraft.com/models.cfm. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">Knight D.W. The self-resonance and self-capacitance of solenoid coils: applicable theory, models and calculation methods (Technical report). May 2016. https://doi.org/10.13140/RG.2.1.1472.0887.</mixed-citation><mixed-citation xml:lang="en">S-parameter &amp; Equivalent Circuit Model. TDK. URL: https://product.tdk.com/info/en/technicalsupport/tvcl/general/mlcc.html. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">О собственной емкости однослойной катушки индуктивности. [Электронный ресурс] – coil32.ru. URL: http://coil32.ru/self-capacitance.html (дата обращения: 02.07.2019).</mixed-citation><mixed-citation xml:lang="en">S-parameter &amp; Equivalent Circuit Model. TDK. URL: https://product.tdk.com/info/en/technicalsupport/tvcl/general/mlcc.html. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit16"><label>16</label><citation-alternatives><mixed-citation xml:lang="ru">Cain J. (AVX Corporation). Parasitic inductance of multylayer ceramic capacitors. February 2002 [Electronic resource] – URL: https://www.avx.com/docs/techinfo/CeramicCapacitors/parasitc.pdf (дата обращения: 02.07.2019).</mixed-citation><mixed-citation xml:lang="en">Prymak J., Randall M., Blais P., Long B. Why that 47 uF capacitor drops to 37 uF, 30 uF, or lower. Procced. CARTS USA 2008. 28 Symposium for Passive Electronics, March, Newport Beach, CA. URL: https://www.researchgate.net/publication/229019152_Why_that_47_uF_capacitor_drops_to_37_uF_30_uF_or_lower. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit17"><label>17</label><citation-alternatives><mixed-citation xml:lang="ru">Prymak J., Randall M., Blais P., Long B. Why that 47 uF capacitor drops to 37 uF, 30 uF, or lower. Procced. CARTS USA 2008. 28 Symposium for Passive Electronics, March, Newport Beach, CA. URL: https://www.researchgate.net/publication/229019152_Why_that_47_uF_capacitor_drops_to_37_uF_30_uF_or_lower. Accessed July 2, 2019.</mixed-citation><mixed-citation xml:lang="en">Prymak J., Randall M., Blais P., Long B. Why that 47 uF capacitor drops to 37 uF, 30 uF, or lower. Procced. CARTS USA 2008. 28 Symposium for Passive Electronics, March, Newport Beach, CA. URL: https://www.researchgate.net/publication/229019152_Why_that_47_uF_capacitor_drops_to_37_uF_30_uF_or_lower. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit18"><label>18</label><citation-alternatives><mixed-citation xml:lang="ru">Technical Terms RF Inductor. Murata Manufacturing Co., Ltd. URL: https://www.murata.com/en-eu/products/inductor/chip/learn/glossary. Accessed July 2, 2019.</mixed-citation><mixed-citation xml:lang="en">Technical Terms RF Inductor. Murata Manufacturing Co., Ltd. URL: https://www.murata.com/en-eu/products/inductor/chip/learn/glossary. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit19"><label>19</label><citation-alternatives><mixed-citation xml:lang="ru">Technical Terms RF Inductor. Murata Manufacturing Co., Ltd. URL: https://www.murata.com/en-eu/products/inductor/chip/learn/glossary. Accessed July 2, 2019.</mixed-citation><mixed-citation xml:lang="en">Technical Terms RF Inductor. Murata Manufacturing Co., Ltd. URL: https://www.murata.com/en-eu/products/inductor/chip/learn/glossary. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit20"><label>20</label><citation-alternatives><mixed-citation xml:lang="ru">Skripnikov Yu.F. Oscillatory circuit. Moscow: Energiya Publ., 1970. 128 p., (in Russ.).</mixed-citation><mixed-citation xml:lang="en">Skripnikov Yu.F. Oscillatory circuit. Moscow: Energiya Publ., 1970. 128 p., (in Russ.).</mixed-citation></citation-alternatives></ref><ref id="cit21"><label>21</label><citation-alternatives><mixed-citation xml:lang="ru">Skripnikov Yu.F. Oscillatory circuit. Moscow: Energiya Publ., 1970. 128 p., (in Russ.).</mixed-citation><mixed-citation xml:lang="en">Skripnikov Yu.F. Oscillatory circuit. Moscow: Energiya Publ., 1970. 128 p., (in Russ.).</mixed-citation></citation-alternatives></ref><ref id="cit22"><label>22</label><citation-alternatives><mixed-citation xml:lang="ru">Medhurst R.G. (GEC Research Labs.) H. F. Resistance and Self-Capacitance of Single-Layer Solenoids. Wireless Engineer. February 1947. P. 35-43.</mixed-citation><mixed-citation xml:lang="en">Medhurst R.G. (GEC Research Labs.) H. F. Resistance and Self-Capacitance of Single-Layer Solenoids. Wireless Engineer. February 1947. P. 35-43.</mixed-citation></citation-alternatives></ref><ref id="cit23"><label>23</label><citation-alternatives><mixed-citation xml:lang="ru">Medhurst R.G. (GEC Research Labs.) H. F. Resistance and Self-Capacitance of Single-Layer Solenoids. Wireless Engineer. February 1947. P. 35-43.</mixed-citation><mixed-citation xml:lang="en">Medhurst R.G. (GEC Research Labs.) H. F. Resistance and Self-Capacitance of Single-Layer Solenoids. Wireless Engineer. February 1947. P. 35-43.</mixed-citation></citation-alternatives></ref><ref id="cit24"><label>24</label><citation-alternatives><mixed-citation xml:lang="ru">Knight D.W. The self-resonance and self-capacitance of solenoid coils: applicable theory, models and calculation methods (Technical report). May 2016. https://doi.org/10.13140/RG.2.1.1472.0887.</mixed-citation><mixed-citation xml:lang="en">Knight D.W. The self-resonance and self-capacitance of solenoid coils: applicable theory, models and calculation methods (Technical report). May 2016. https://doi.org/10.13140/RG.2.1.1472.0887.</mixed-citation></citation-alternatives></ref><ref id="cit25"><label>25</label><citation-alternatives><mixed-citation xml:lang="ru">Knight D.W. The self-resonance and self-capacitance of solenoid coils: applicable theory, models and calculation methods (Technical report). May 2016. https://doi.org/10.13140/RG.2.1.1472.0887.</mixed-citation><mixed-citation xml:lang="en">Knight D.W. The self-resonance and self-capacitance of solenoid coils: applicable theory, models and calculation methods (Technical report). May 2016. https://doi.org/10.13140/RG.2.1.1472.0887.</mixed-citation></citation-alternatives></ref><ref id="cit26"><label>26</label><citation-alternatives><mixed-citation xml:lang="ru">The self-capacitance of a single-layer air core solenoid (in Russ.). URL: https://coil32.net/theory/selfcapacitance.html. Accessed July 2, 2019.</mixed-citation><mixed-citation xml:lang="en">The self-capacitance of a single-layer air core solenoid (in Russ.). URL: https://coil32.net/theory/selfcapacitance.html. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit27"><label>27</label><citation-alternatives><mixed-citation xml:lang="ru">The self-capacitance of a single-layer air core solenoid (in Russ.). URL: https://coil32.net/theory/selfcapacitance.html. Accessed July 2, 2019.</mixed-citation><mixed-citation xml:lang="en">The self-capacitance of a single-layer air core solenoid (in Russ.). URL: https://coil32.net/theory/selfcapacitance.html. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit28"><label>28</label><citation-alternatives><mixed-citation xml:lang="ru">Cain J. (AVX Corporation). Parasitic inductance of multylayer ceramic capacitors. February 2002 URL: https://www.avx.com/docs/techinfo/CeramicCapacitors/parasitc.pdf. Accessed July 2, 2019.</mixed-citation><mixed-citation xml:lang="en">Cain J. (AVX Corporation). Parasitic inductance of multylayer ceramic capacitors. February 2002 URL: https://www.avx.com/docs/techinfo/CeramicCapacitors/parasitc.pdf. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref><ref id="cit29"><label>29</label><citation-alternatives><mixed-citation xml:lang="ru">Cain J. (AVX Corporation). Parasitic inductance of multylayer ceramic capacitors. February 2002 URL: https://www.avx.com/docs/techinfo/CeramicCapacitors/parasitc.pdf. Accessed July 2, 2019.</mixed-citation><mixed-citation xml:lang="en">Cain J. (AVX Corporation). Parasitic inductance of multylayer ceramic capacitors. February 2002 URL: https://www.avx.com/docs/techinfo/CeramicCapacitors/parasitc.pdf. Accessed July 2, 2019.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
