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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mireabulletin</journal-id><journal-title-group><journal-title xml:lang="ru">Russian Technological Journal</journal-title><trans-title-group xml:lang="en"><trans-title>Russian Technological Journal</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2782-3210</issn><issn pub-type="epub">2500-316X</issn><publisher><publisher-name>RTU MIREA</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32362/2500-316X-2026-14-1-43-54</article-id><article-id custom-type="edn" pub-id-type="custom">AYEFUG</article-id><article-id custom-type="elpub" pub-id-type="custom">mireabulletin-1370</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МИКРО- И НАНОЭЛЕКТРОНИКА. ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MICRO- AND NANOELECTRONICS. CONDENSED MATTER PHYSICS</subject></subj-group></article-categories><title-group><article-title>Создание двумерных полупроводников на поверхности сегнетоэлектрических пленок методом механической эксфолиации при помощи золота</article-title><trans-title-group xml:lang="en"><trans-title>Fabrication of two-dimensional semiconductors on the surface of ferroelectric films by means of gold-assisted mechanical exfoliation</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0002-0507-6242</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Жемеров</surname><given-names>Е. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Zhemerov</surname><given-names>E. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Жемеров Евгений Игоревич - студент, стажер-исследователь, лаборатория физики для нейроморфных вычислительных систем, Институт перспективных технологий и индустриального программирования.</p><p>119454, Москва, пр-т Вернадского, д. 78</p><p>ResearcherID LLM-2528-2024</p></bio><bio xml:lang="en"><p>Evgeny I. Zhemerov - Student, Researcher Intern, Laboratory of Physics for Neuromorphic Computing Systems, Institute for Advanced Technologies and Industrial Programming, MIREA – Russian Technological University.</p><p>78, Vernadskogo pr., Moscow, 119454</p><p>ResearcherID LLM-2528-2024</p></bio><email xlink:type="simple">zhemerov@mirea.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-8462-5811</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гуськов</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Guskov</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Гуськов Андрей Александрович - аспирант, младший научный сотрудник, лаборатория физики для нейроморфных вычислительных систем, Институт перспективных технологий и индустриального программирования.</p><p>119454, Москва, пр-т Вернадского, д. 78</p><p>Scopus Author ID 57225969940</p><p>ResearcherID AAE-2479-2022</p></bio><bio xml:lang="en"><p>Andrey A. Guskov - Graduate Student, Junior Researcher, Laboratory of Physics for Neuromorphic Computing Systems, Institute for Advanced Technologies and Industrial Programming, MIREA – Russian Technological University.</p><p>78, Vernadskogo pr., Moscow, 119454</p><p>Scopus Author ID 57225969940</p><p>ResearcherID AAE-2479-2022</p></bio><email xlink:type="simple">guskov@mirea.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0009-5310-3146</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Булавинцева</surname><given-names>Е. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Bulavintseva</surname><given-names>E. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Булавинцева Елизавета Александровна - студент, сотрудник лаборатории физики для нейроморфных вычислительных систем, Институт перспективных технологий и индустриального программирования.</p><p>119454, Москва, пр-т Вернадского, д. 78</p><p>ResearcherID LLM-2612-2024</p></bio><bio xml:lang="en"><p>Elizaveta A. Bulavintseva - Student, Researcher Intern, Laboratory of Physics for Neuromorphic Computing Systems, Institute for Advanced Technologies and Industrial Programming, MIREA – Russian Technological University.</p><p>78, Vernadskogo pr., Moscow, 119454</p><p>ResearcherID LLM-2612-2024</p></bio><email xlink:type="simple">Liza12.07.2002@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-6371-9632</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Серегин</surname><given-names>Д. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Seregin</surname><given-names>D. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Серегин Дмитрий Сергеевич - к.т.н., начальник отдела, Научно-образовательный центр «Технологический центр», Институт перспективных технологий и индустриального программирования.</p><p>119454, Москва, пр-т Вернадского, д. 78</p><p>Scopus Author ID 55643557800</p><p>ResearcherID R-6023-2016</p></bio><bio xml:lang="en"><p>Dmitry S. Seregin - Cand. Sci. (Eng.), Head of the Department, Research and Education Center “Technology Center”, Institute for Advanced Technologies and Industrial Programming, MIREA – Russian Technological University.</p><p>78, Vernadskogo pr., Moscow, 119454</p><p>Scopus Author ID 55643557800</p><p>ResearcherID R-6023-2016</p></bio><email xlink:type="simple">d_seregin@mirea.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-9432-860X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Лавров</surname><given-names>С. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Lavrov</surname><given-names>S. D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Лавров Сергей Дмитриевич - к.ф.-м.н., старший научный сотрудник, лаборатория физики для нейроморфных вычислительных систем; доцент, кафедра наноэлектроники, Институт перспективных технологий и индустриального программирования.</p><p>119454, Москва, пр-т Вернадского, д. 78</p><p>Scopus Author ID 55453548100</p><p>ResearcherID G-2912-2016</p></bio><bio xml:lang="en"><p>Sergei D. Lavrov - Cand. Sci. (Phys.-Math.), Senior Researcher, Laboratory of Physics for Neuromorphic Computing Systems; Associate Professor, Department of Nanoelectronics, Institute for Advanced Technologies and Industrial Programming, MIREA – Russian Technological University.</p><p>78, Vernadskogo pr., Moscow, 119454</p><p>Scopus Author ID 55453548100</p><p>ResearcherID G-2912-2016</p></bio><email xlink:type="simple">lavrov_s@mirea.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>МИРЭА – Российский технологический университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>MIREA – Russian Technological University</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2026</year></pub-date><pub-date pub-type="epub"><day>05</day><month>02</month><year>2026</year></pub-date><volume>14</volume><issue>1</issue><fpage>43</fpage><lpage>54</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Жемеров Е.И., Гуськов А.А., Булавинцева Е.А., Серегин Д.С., Лавров С.Д., 2026</copyright-statement><copyright-year>2026</copyright-year><copyright-holder xml:lang="ru">Жемеров Е.И., Гуськов А.А., Булавинцева Е.А., Серегин Д.С., Лавров С.Д.</copyright-holder><copyright-holder xml:lang="en">Zhemerov E.I., Guskov A.A., Bulavintseva E.A., Seregin D.S., Lavrov S.D.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.rtj-mirea.ru/jour/article/view/1370">https://www.rtj-mirea.ru/jour/article/view/1370</self-uri><abstract><sec><title>Цели</title><p>Цели. Цель работы заключается в разработке и демонстрации эффективного метода получения протяженных и высококачественных монослоев дисульфида молибдена (MoS2) на поверхности сегнетоэлектрических пленок цирконата-титаната свинца (ЦТС) с выраженной зернистой и текстурированной структурой. Стандартные методы механической эксфолиации оказываются неэффективными для переноса двумерных материалов на неровные поверхности из-за локальных перепадов высоты и зернистости подложки, что приводит к невозможности формирования протяженных монослоев и высокой плотности дефектов в переносимых структурах. Особую сложность представляет перенос на функциональные подложки с рельефом поверхности, характеризующимся неоднородностью на масштабах от десятков нанометров до микрометров.</p></sec><sec><title>Методы</title><p>Методы. Использован метод золото-ассистированной эксфолиации (gold-assisted exfoliation, GAE), включающий магнетронное напыление золотой пленки толщиной 50 нм, механическое отделение монослоев с помощью терморасщепляемого скотча и последующее травление золота. Характеризация проведена методами рентгеновской дифракции, оптической конфокальной микроскопии, атомно-силовой микроскопии и генерации второй оптической гармоники. Сравнение эффективности переноса выполнено на подложках кремния/оксида кремния (Si/SiO2) и ЦТС.</p></sec><sec><title>Результаты</title><p>Результаты. Получены кристаллиты MoS2 площадью до 3000 мкм2 на ЦТС и свыше 65000 мкм2 – на стандартных подложках Si/SiO2 при минимальной плотности дефектов. Показано, что стандартная механическая эксфолиация не обеспечивает перенос на текстурированные поверхности, тогда как GAE сохраняет монослойность переносимых кристаллитов даже на неровных подложках.</p></sec><sec><title>Выводы</title><p>Выводы. Впервые продемонстрирована возможность получения протяженных и высококачественных монослоев MoS2 на подложках с выраженной зернистой и текстурированной структурой, таких как сегнетоэлектрические пленки ЦТС, с помощью метода золото-ассистированной эксфолиации. Показано, что золото-ассистированная эксфолиация представляет собой эффективный метод для создания протяженных двумерных пленок с контролируемыми морфологическими и структурными характеристиками, в т.ч. на подложках, ранее считавшихся непригодными для подобных задач.</p></sec></abstract><trans-abstract xml:lang="en"><sec><title>Objectives</title><p>Objectives. The aim of this study is to develop and demonstrate an effective method for obtaining large-area, high-quality monolayers of molybdenum disulfide (MoS2) on the surface of ferroelectric lead zirconate titanate (PZT) films which exhibit pronounced granularity and texturing. Conventional mechanical exfoliation techniques are inefficient for transferring two-dimensional materials onto nonplanar surfaces. This is due to local height variations and substrate granularity which hinder the formation of continuous monolayers and high-defect-density transferred structures. A particular challenge is the transfer onto functional substrates with surface topography characterized by heterogeneities ranging from tens of nanometers to micrometers.</p></sec><sec><title>Methods</title><p>Methods. A gold-assisted exfoliation (GAE) method was employed, including: magnetron sputtering of a 50 nm gold film; mechanical delamination of monolayers using thermally cleavable tape; and subsequent gold etching. The characterization was performed using X-ray diffraction, optical confocal microscopy, atomic force microscopy, and second harmonic generation techniques. The efficiency of the transfer process was compared for Si/SiO2 and PZT substrates.</p></sec><sec><title>Results</title><p>Results. MoS2 crystallites with areas up to 3000 µm2 were obtained on PZT and over 65000 µm2 on standard Si/SiO2 substrates, both of which exhibit minimal defect densities. Conventional mechanical exfoliation is shown to be unable to ensure transfer onto textured surfaces, whereas the GAE method preserves the monolayer character of the transferred crystallites even on nonplanar substrates.</p></sec><sec><title>Conclusions</title><p>Conclusions. This work demonstrates for the first time the possibility of obtaining large-area, high-quality MoS2 monolayers on substrates with pronounced grainy and textured structures, such as ferroelectric PZT films, using the gold-assisted exfoliation method. The work also shows that gold-assisted exfoliation is an effective technique for fabricating extended two-dimensional films with controlled morphological and structural properties, including on substrates previously considered unsuitable for such applications.</p></sec></trans-abstract><kwd-group xml:lang="ru"><kwd>двумерные материалы</kwd><kwd>дисульфид молибдена</kwd><kwd>золото-ассистированная эксфолиация</kwd><kwd>сегнетоэлектрические пленки</kwd><kwd>цирконат-титанат свинца</kwd><kwd>механическая эксфолиация</kwd><kwd>наноструктуры</kwd><kwd>FeFET</kwd></kwd-group><kwd-group xml:lang="en"><kwd>two-dimensional materials</kwd><kwd>molybdenum disulfide</kwd><kwd>gold-assisted exfoliation</kwd><kwd>ferroelectric thin films</kwd><kwd>lead zirconate titanate</kwd><kwd>mechanical exfoliation</kwd><kwd>nanostructures</kwd><kwd>FeFET</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Основные результаты исследования были получены при поддержке Российского научного фонда (проект № 24-79-10304) в части разработки методики создания двумерных пленок, а также Министерства науки и высшего образования Российской Федерации (проект № FSFZ-2024-0047) – в части экспериментальных методик исследования свойств созданных структур.</funding-statement><funding-statement xml:lang="en">The main results of the study were obtained with the support of the Russian Science Foundation (project No. 24-79-10304) in terms of developing a method for creating two-dimensional films, as well as the Ministry of Science and Higher Education of the Russian Federation (project No. FSFZ-2024-0047) in terms of experimental methods for studying the properties of the created structures.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Ziewer J., Ghosh A., Hanušová M., Pirker L., Frank O., Velický M., Grüning M., Huang F. 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