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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mireabulletin</journal-id><journal-title-group><journal-title xml:lang="ru">Russian Technological Journal</journal-title><trans-title-group xml:lang="en"><trans-title>Russian Technological Journal</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2782-3210</issn><issn pub-type="epub">2500-316X</issn><publisher><publisher-name>RTU MIREA</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32362/2500-316X-2025-13-2-46-56</article-id><article-id custom-type="edn" pub-id-type="custom">TNQTWK</article-id><article-id custom-type="elpub" pub-id-type="custom">mireabulletin-1126</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МИКРО- И НАНОЭЛЕКТРОНИКА. ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MICRO- AND NANOELECTRONICS. CONDENSED MATTER PHYSICS</subject></subj-group></article-categories><title-group><article-title>Распределение напряженности температурного поля на поверхности включений графена в матричном композите</article-title><trans-title-group xml:lang="en"><trans-title>Distribution of temperature field strength on the surface of graphene inclusions in a matrix composite</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-1467-5100</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Лавров</surname><given-names>И. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Lavrov</surname><given-names>Igor V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Лавров Игорь Викторович, к.ф.-м.н., доцент, старший научный сотрудник</p><p>119334, Москва, Ленинский пр-т, д. 32А</p><p>Scopus Author ID 35318030100; </p><p>ResearcherID D-1011-2017</p></bio><bio xml:lang="en"><p>Igor V. Lavrov, Cand. Sci. (Phys.-Math.), Assistant Professor, Senior Researcher</p><p>32A, Leninskii pr., Moscow, 119334</p><p>Scopus Author ID 35318030100;</p><p>ResearcherID D-1011-2017</p></bio><email xlink:type="simple">iglavr@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-8805-5764</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Бардушкин</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Bardushkin</surname><given-names>Vladimir V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Бардушкин Владимир Валентинович, д.ф.-м.н., доцент, главный научный сотрудник</p><p>119334, Москва, Ленинский пр-т, д. 32А</p><p>Scopus Author ID 55620242900;</p><p>ResearcherID D-1010-2017</p></bio><bio xml:lang="en"><p>Vladimir V. Bardushkin, Dr. Sci. (Phys.-Math.), Assistant Professor, Chief Researcher</p><p>32A, Leninskii pr., Moscow, 119334</p><p>Scopus Author ID 55620242900;</p><p>ResearcherID D-1010-2017</p></bio><email xlink:type="simple">bardushkin@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-8515-3951</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Яковлев</surname><given-names>В. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Yakovlev</surname><given-names>Victor B.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Яковлев Виктор Борисович, д.ф.-м.н., профессор, главный научный сотрудник и ученый секретарь</p><p>119334, Москва, Ленинский пр-т, д. 32А</p><p>Scopus Author ID 7201907574;</p><p>ResearcherID E-7995-2017</p></bio><bio xml:lang="en"><p>Victor B. Yakovlev, Dr. Sci. (Phys.-Math.), Professor, Chief Researcher, Scientific Secretary</p><p>32A, Leninskii pr., Moscow, 119334</p><p>Scopus Author ID 7201907574;</p><p>ResearcherID E-7995-2017</p></bio><email xlink:type="simple">yakvb@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Институт нанотехнологий микроэлектроники, Российская академия наук</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>28</day><month>01</month><year>2025</year></pub-date><volume>13</volume><issue>2</issue><fpage>46</fpage><lpage>56</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Лавров И.В., Бардушкин В.В., Яковлев В.Б., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Лавров И.В., Бардушкин В.В., Яковлев В.Б.</copyright-holder><copyright-holder xml:lang="en">Lavrov I.V., Bardushkin V.V., Yakovlev V.B.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.rtj-mirea.ru/jour/article/view/1126">https://www.rtj-mirea.ru/jour/article/view/1126</self-uri><abstract><sec><title>Цели</title><p>Цели. Цель работы – получить аналитическое выражение для распределения напряженности температурного поля на поверхностях анизотропных включений в форме тонких дисков в матричном композите и применить полученные выражения для прогнозирования величины напряженности температурного поля на поверхности графеновых включений со стороны матрицы.</p></sec><sec><title>Методы</title><p>Методы. Включение в форме тонкого кругового диска является частным предельным случаем эллипсоидального включения. Для получения требуемых аналитических выражений используется ранее полученное авторами более общее выражение для оператора концентрации напряженности электрического поля на поверхности эллипсоидального включения, поскольку задачи нахождения электростатического и температурного поля в стационарном случае математически эквивалентны. Данный оператор связывает напряженность поля на поверхности включения со стороны матрицы со средней напряженностью поля в образце композита, выражение для него получено в обобщенном сингулярном приближении.</p></sec><sec><title>Результаты</title><p>Результаты. Получены аналитические выражения для оператора концентрации напряженности температурного поля на поверхности включения в форме тонкого диска из многослойного графена в матричном композите с учетом анизотропии включения в зависимости от положения точки на поверхности включения, от объемной доли включений в материале, от ориентации включения. Рассмотрены два вида распределения ориентаций включений: одинаково ориентированные включения и равномерное распределение ориентаций включений. Проведены модельные расчеты величины напряженности температурного поля в точках ребра включения-диска в зависимости от угла между радиус-вектором данной точки и направлением напряженности приложенного поля.</p></sec><sec><title>Выводы</title><p>Выводы. Показано, что в случае графеновых многослойных включений в точках на их ребрах величина напряженности поля может на несколько порядков превышать напряженность приложенного поля.</p></sec></abstract><trans-abstract xml:lang="en"><sec><title>Objectives</title><p>Objectives. The study sets out to obtain an analytical expression for the distribution of the temperature field strength on the surfaces of anisotropic graphene inclusions taking the form of thin disks in the matrix composite and to use the obtained expressions to predict the strength of the temperature field on the surface of inclusions from the matrix side.</p></sec><sec><title>Methods</title><p>Methods. An inclusion taking the form of a thin circular disk represents a special limit case of an ellipsoidal inclusion. To obtain the corresponding analytical expressions, the authors use their previously derived more general expression for the operator of the concentration of the electric field strength on the surface of ellipsoidal inclusion. The approach is justified by the mathematical equivalence of problems of finding the electrostatic and temperature field in the stationary case. The operator relates the field strength on the inclusion surface from the matrix side to the average field strength in the composite sample; the corresponding expression is obtained in a generalized singular approximation.</p></sec><sec><title>Results</title><p>Results. Analytical expressions were obtained for the operator of the concentration of the temperature field strength on the surface of the inclusion taking the form of a thin disk of multilayer graphene in a matrix composite. The expressions take into account inclusion anisotropy, the position of the point on the inclusion surface, the volume fraction of inclusions in the material, and the inclusion orientation. Two types of inclusion orientation distributions were considered: equally oriented inclusions and uniform distribution of inclusion orientations. Model calculations of the value for the temperature field strength at the points of the inclusion disk edge as a function of the angle between the radius vector of this point and the direction of the applied field strength were carried out. Conclusions. In the case of graphene multilayer inclusions, it is shown that the field strength at points on their edges can exceed the applied field strength by several orders of magnitude.</p></sec></trans-abstract><kwd-group xml:lang="ru"><kwd>композит</kwd><kwd>матрица</kwd><kwd>графен</kwd><kwd>включение</kwd><kwd>операторы концентрации напряженности температурного поля</kwd><kwd>обобщенное сингулярное приближение</kwd></kwd-group><kwd-group xml:lang="en"><kwd>composite</kwd><kwd>matrix</kwd><kwd>graphene</kwd><kwd>inclusion</kwd><kwd>operators of temperature field strength concentration</kwd><kwd>generalized singular approximation</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Novoselov K.S., Geim A.K., Morozov S.V., Jiang D., Zhang Y., Dubonos S.V., Grigorieva I.V., Firsov A.A. Electric field effect in atomically thin carbon films. 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